FDS2572
- Mfr.Part #
- FDS2572
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 4.9A 8SOIC
- Stock
- 24,978
- In Stock :
- 24,978
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Fall Time (Typ) :
- 22 ns
- Mount :
- Surface Mount
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Operating Temperature :
- -55°C~150°C TJ
- Turn-Off Delay Time :
- 44 ns
- Continuous Drain Current (ID) :
- 4.9A
- Number of Terminations :
- 8
- Peak Reflow Temperature (Cel) :
- 260
- Series :
- UltraFET™
- Element Configuration :
- Single
- Resistance :
- 47mOhm
- Current Rating :
- 4.9A
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 2.5W
- RoHS Status :
- ROHS3 Compliant
- Height :
- 1.5mm
- Contact Plating :
- Tin
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Published :
- 2001
- Transistor Application :
- SWITCHING
- REACH SVHC :
- No SVHC
- Weight :
- 130mg
- JESD-609 Code :
- e3
- Input Capacitance (Ciss) (Max) @ Vds :
- 2050pF @ 25V
- Power Dissipation-Max :
- 2.5W Ta
- Threshold Voltage :
- 4V
- Lifecycle Status :
- ACTIVE (Last Updated: 22 hours ago)
- Rise Time :
- 4ns
- Vgs (Max) :
- ±20V
- Voltage - Rated DC :
- 150V
- Current - Continuous Drain (Id) @ 25°C :
- 4.9A Tc
- Number of Pins :
- 8
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- Drain to Source Breakdown Voltage :
- 150V
- Width :
- 4mm
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 20V
- Radiation Hardening :
- No
- Length :
- 5mm
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Turn On Delay Time :
- 14 ns
- Time@Peak Reflow Temperature-Max (s) :
- 30
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Rds On (Max) @ Id, Vgs :
- 47m Ω @ 4.9A, 10V
- Factory Lead Time :
- 12 Weeks
- Datasheets
- FDS2572

N-Channel Tape & Reel (TR) 47m Ω @ 4.9A, 10V ±20V 2050pF @ 25V 38nC @ 10V 8-SOIC (0.154, 3.90mm Width)
FDS2572 Description
With a voltage of 150V, the FDS2572 is an N-channel Power MOSFET transistor from ON Semiconductor. Ultra FET? devices have a unique set of properties that enable them to achieve industry-leading efficiency in power conversion applications. These devices are ideal for high frequency DC to DC converters because they have low Rds(on), low ESR, low total, and Miller gate charge.
FDS2572 Features
-
RDS(ON) = 0.040Ω (Typ.), VGS = 10V
-
Qg(TOT) = 29nC (Typ.), VGS = 10V
-
Low QRR Body Diode
-
Maximized efficiency at high frequencies
-
UIS Rated
FDS2572 Applications
-
This product is general usage and suitable for many different applications.
-
DC/DC Converters
-
Telecom and Data-Com Distributed Power Architectures
-
48-volt I/P Half-bridge/Full-Bridge
-
24-volt Forward and Push-Pull Topologies
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