FDS2572
- Mfr.Part #
- FDS2572
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 4
- Stock
- 27,263
- In Stock :
- 27,263
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Pbfree Code :
- yes
- Input Capacitance (Ciss) (Max) @ Vds :
- 2050pF @ 25V
- Number of Terminations :
- 8
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Voltage - Rated DC :
- 150V
- Weight :
- 130mg
- JESD-609 Code :
- e3
- Resistance :
- 47mOhm
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 12 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 10V
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- 260
- Rds On (Max) @ Id, Vgs :
- 47m Ω @ 4.9A, 10V
- Threshold Voltage :
- 4V
- Turn-Off Delay Time :
- 44 ns
- Contact Plating :
- Tin
- Height :
- 1.5mm
- Element Configuration :
- Single
- Series :
- UltraFET™
- Width :
- 4mm
- Power Dissipation :
- 2.5W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 4.9A Tc
- Current Rating :
- 4.9A
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Fall Time (Typ) :
- 22 ns
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Length :
- 5mm
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Gate to Source Voltage (Vgs) :
- 20V
- Rise Time :
- 4ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- REACH SVHC :
- No SVHC
- Power Dissipation-Max :
- 2.5W Ta
- Number of Pins :
- 8
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Terminal Position :
- Dual
- Drain to Source Breakdown Voltage :
- 150V
- Lifecycle Status :
- ACTIVE (Last Updated: 22 hours ago)
- Continuous Drain Current (ID) :
- 4.9A
- Published :
- 2001
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~150°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- Vgs (Max) :
- ±20V
- Turn On Delay Time :
- 14 ns
- Datasheets
- FDS2572

N-Channel Tape & Reel (TR) 47m Ω @ 4.9A, 10V ±20V 2050pF @ 25V 38nC @ 10V 8-SOIC (0.154, 3.90mm Width)
FDS2572 Description
With a voltage of 150V, the FDS2572 is an N-channel Power MOSFET transistor from ON Semiconductor. Ultra FET? devices have a unique set of properties that enable them to achieve industry-leading efficiency in power conversion applications. These devices are ideal for high frequency DC to DC converters because they have low Rds(on), low ESR, low total, and Miller gate charge.
FDS2572 Features
-
RDS(ON) = 0.040Ω (Typ.), VGS = 10V
-
Qg(TOT) = 29nC (Typ.), VGS = 10V
-
Low QRR Body Diode
-
Maximized efficiency at high frequencies
-
UIS Rated
FDS2572 Applications
-
This product is general usage and suitable for many different applications.
-
DC/DC Converters
-
Telecom and Data-Com Distributed Power Architectures
-
48-volt I/P Half-bridge/Full-Bridge
-
24-volt Forward and Push-Pull Topologies
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