FJA4313RTU
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- Mfr.Part #
- FJA4313RTU
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- TRANS NPN 250V 17A TO3PN
- Stock
- 48,491
- In Stock ：
- 48,491
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 5μA ICBO
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 weeks ago)
- Number of Elements :
- 1
- Transistor Application :
- AMPLIFIER
- Mount :
- Through Hole
- Collector Emitter Saturation Voltage :
- 400mV
- Mounting Type :
- Through Hole
- Transition Frequency :
- 30MHz
- Max Power Dissipation :
- 130W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 55 @ 1A 5V
- Collector Emitter Breakdown Voltage :
- 250V
- Polarity/Channel Type :
- NPN
- Transistor Type :
- NPN
- Gain Bandwidth Product :
- 30MHz
- Current Rating :
- 10A
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 800mA, 8A
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Published :
- 2005
- Weight :
- 6.401g
- Emitter Base Voltage (VEBO) :
- 5V
- Package / Case :
- TO-3P-3, SC-65-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 17A
- Collector Emitter Voltage (VCEO) :
- 250V
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- RoHS Compliant
- Collector Base Voltage (VCBO) :
- 250V
- Voltage - Rated DC :
- 140V
- Power Dissipation :
- 130W
- Terminal Finish :
- Tin (Sn)
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- hFE Min :
- 55
- Transistor Element Material :
- SILICON
- Frequency :
- 30MHz
- Packaging :
- Tube
- Factory Lead Time :
- 6 Weeks
- Datasheets
- FJA4313RTU
NPN 150°C TJ 5μA ICBO 1 Elements 3 Terminations SILICON NPN TO-3P-3, SC-65-3 Tube Through Hole
FJA4313RTU Overview
In this device, the DC current gain is 55 @ 1A 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 400mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 800mA, 8A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 10A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 30MHz.Single BJT transistor is possible for the collector current to fall as low as 17A volts at Single BJT transistors maximum.
FJA4313RTU Features
the DC current gain for this device is 55 @ 1A 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 30MHz
FJA4313RTU Applications
There are a lot of ON Semiconductor
FJA4313RTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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