FJB3307DTM
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- Mfr.Part #
- FJB3307DTM
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- TRANS NPN 400V 8A D2PAK
- Stock
- 6,670
- In Stock ：
- 6,670
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 2
- Packaging :
- Tape and Reel (TR)
- Weight :
- 1.31247g
- Height :
- 4.83mm
- Collector Emitter Voltage (VCEO) :
- 400V
- Collector Emitter Breakdown Voltage :
- 400V
- Transistor Element Material :
- SILICON
- Base Part Number :
- FJB3307
- Power Dissipation :
- 1.72W
- Mount :
- Surface Mount
- JESD-609 Code :
- e3
- RoHS Status :
- RoHS Compliant
- Pbfree Code :
- yes
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 700V
- Collector Emitter Saturation Voltage :
- 3V
- Terminal Finish :
- Tin (Sn)
- Factory Lead Time :
- 6 Weeks
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- NPN
- Length :
- 10.67mm
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 2A, 8A
- ECCN Code :
- EAR99
- Published :
- 2012
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- REACH SVHC :
- No SVHC
- Element Configuration :
- Single
- Transistor Type :
- NPN
- Max Collector Current :
- 8A
- JESD-30 Code :
- R-PSSO-G2
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 9V
- Continuous Collector Current :
- 8A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 5 @ 5A 5V
- Operating Temperature :
- 150°C TJ
- Max Frequency :
- 1MHz
- Width :
- 9.65mm
- Number of Elements :
- 1
- hFE Min :
- 8
- Max Breakdown Voltage :
- 400V
- Radiation Hardening :
- No
- Max Power Dissipation :
- 1.72W
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 day ago)
- Datasheets
- FJB3307DTM
NPN 150°C TJ 1 Elements 2 Terminations SILICON NPN TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Tape & Reel (TR) Surface Mount
FJB3307DTM Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 5 @ 5A 5V.With a collector emitter saturation voltage of 3V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 2A, 8A.In order to achieve high efficiency, the continuous collector voltage should be kept at 8A.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.There is a breakdown input voltage of 400V volts that it can take.Collector current can be as low as 8A volts at its maximum.
FJB3307DTM Features
the DC current gain for this device is 5 @ 5A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 2A, 8A
the emitter base voltage is kept at 9V
FJB3307DTM Applications
There are a lot of ON Semiconductor
FJB3307DTM applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| FJB3307DTM | onsemi | 6,670 | TRANS NPN 400V 8A D2PAK |
| FJB3307DTM | onsemi | 6,670 | TRANS NPN 400V 8A D2PAK |
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