FJBE2150DTU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Elements :

1

Vce Saturation (Max) @ Ib, Ic :

250mV @ 330mA, 1A

HTS Code :

8541.29.00.95

RoHS Status :

RoHS Compliant

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Collector Emitter Saturation Voltage :

250mV

JESD-609 Code :

e3

Collector Base Voltage (VCBO) :

1.5kV

Number of Terminations :

2

Series :

ESBC™

Max Collector Current :

2A

Current - Collector Cutoff (Max) :

100μA

Collector Emitter Breakdown Voltage :

800V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transition Frequency :

5MHz

Weight :

1.88g

Radiation Hardening :

No

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Length :

10.67mm

Number of Pins :

3

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Case Connection :

COLLECTOR

Max Power Dissipation :

110W

Pbfree Code :

yes

Height :

4.83mm

Terminal Finish :

Tin (Sn)

Gain Bandwidth Product :

5MHz

Factory Lead Time :

6 Weeks

Power - Max :

110W

Element Configuration :

Single

Polarity/Channel Type :

NPN

hFE Min :

20

Packaging :

Tube

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 400mA 3V

Emitter Base Voltage (VEBO) :

12V

Lead Free :

Lead Free

Operating Temperature :

-55°C~125°C TJ

Published :

2015

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Width :

9.85mm

Collector Emitter Voltage (VCEO) :

800V

Mount :

Surface Mount

Transistor Type :

NPN

Transistor Element Material :

SILICON