FSB660A
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- Mfr.Part #
- FSB660A
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 2A SOT23-3
- Stock
- 32,009
- In Stock ：
- 32,009
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 500mA 2V
- Height :
- 940μm
- Collector Emitter Voltage (VCEO) :
- 60V
- REACH SVHC :
- No SVHC
- Terminal Finish :
- Tin (Sn)
- Weight :
- 30mg
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- -60V
- Mount :
- Surface Mount
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Polarity/Channel Type :
- PNP
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 75MHz
- Length :
- 2.92mm
- Collector Emitter Breakdown Voltage :
- 60V
- Lead Free :
- Lead Free
- hFE Min :
- 250
- Max Power Dissipation :
- 500mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Power Dissipation :
- 500mW
- Collector Emitter Saturation Voltage :
- 300mV
- Transition Frequency :
- 75MHz
- Emitter Base Voltage (VEBO) :
- -5V
- Radiation Hardening :
- No
- Frequency :
- 75MHz
- Max Breakdown Voltage :
- 60V
- JESD-609 Code :
- e3
- Transistor Type :
- PNP
- Voltage - Rated DC :
- -60V
- Number of Pins :
- 3
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 20 Weeks
- Published :
- 2017
- Width :
- 1.4mm
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Current Rating :
- -2A
- Base Part Number :
- FSB660
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 200mA, 2A
- Max Collector Current :
- 2A
- Datasheets
- FSB660A
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
FSB660A Overview
This device has a DC current gain of 250 @ 500mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 300mV.A VCE saturation (Max) of 300mV @ 200mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 75MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 2A volts is possible.
FSB660A Features
the DC current gain for this device is 250 @ 500mA 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 75MHz
FSB660A Applications
There are a lot of ON Semiconductor
FSB660A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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