IXFK21N100F
- Mfr.Part #
- IXFK21N100F
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 21A TO264
- Stock
- 3,685
- In Stock :
- 3,685
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max (Abs) :
- 500 W
- Drain to Source Breakdown Voltage :
- 1kV
- Package / Case :
- TO-264-3, TO-264AA
- Series :
- HiPerRF™
- Terminal Form :
- THROUGH-HOLE
- Power Dissipation (Max) :
- 500W (Tc)
- Drain Current-Max (Abs) (ID) :
- 21 A
- Drain to Source Voltage (Vdss) :
- 1000V
- Pulsed Drain Current-Max (IDM) :
- 84A
- DS Breakdown Voltage-Min :
- 1000 V
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Operating Temperature :
- 150 °C
- Polarity/Channel Type :
- N-Channel
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Reach Compliance Code :
- Compliant
- Power Dissipation :
- 500W
- Turn-Off Delay Time :
- 55 ns
- Max Power Dissipation :
- 500 W
- Input Capacitance (Ciss) (Max) @ Vds :
- 5500pF @ 25V
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Drain to Source Resistance :
- 500 mΩ
- Element Configuration :
- Single
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Terminations :
- 3
- Terminal Position :
- Single
- Min Operating Temperature :
- -55 °C
- REACH SVHC :
- No SVHC
- Supplier Device Package :
- TO-264 (IXFK)
- Number of Elements :
- 1
- Qualification Status :
- Not Qualified
- Rds On (Max) @ Id, Vgs :
- 500m Ω @ 10.5A, 10V
- Vgs(th) (Max) @ Id :
- 5.5V @ 4mA
- FET Feature :
- --
- Transistor Element Material :
- SILICON
- Product Status :
- Obsolete
- Factory Lead Time :
- 10 Weeks
- Drain-source On Resistance-Max :
- 0.5Ohm
- Rise Time :
- 16ns
- Package Shape :
- RECTANGULAR
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~150°C TJ
- Fall Time (Typ) :
- 15 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Mounting Type :
- Through Hole
- JEDEC-95 Code :
- TO-264AA
- Current - Continuous Drain (Id) @ 25°C :
- 21A Tc
- JESD-30 Code :
- R-PSFM-T3
- RoHS :
- Compliant
- Power Dissipation-Max :
- 500W Tc
- Package :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 160nC @ 10V
- ECCN Code :
- EAR99
- Packaging :
- Tube
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Additional Feature :
- AVALANCHE RATED
- Number of Terminals :
- 3
- Surface Mount :
- No
- Base Product Number :
- IXFK21
- Manufacturer :
- IXYS Corporation
- Case Connection :
- DRAIN
- Published :
- 2002
- Continuous Drain Current (ID) :
- 21A
- RoHS Status :
- RoHS Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Pins :
- 3
- Datasheets
- IXFK21N100F

N-Channel Tube 500m Ω @ 10.5A, 10V ±20V 5500pF @ 25V 160nC @ 10V 1000V TO-264-3, TO-264AA
IXFK21N100F Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 2500 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 5500pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 21A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 1kV, and this device has a drainage-to-source breakdown voltage of 1kVV.Drain current refers to the maximum continuous current a device can conduct, and it is 21 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 55 ns.Peak drain current is 84A, which is the maximum pulsed drain current.This device has a drain-to-source resistance of 500 mΩ when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 1000 V.For this transistor to work, a voltage 1000V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFK21N100F Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 21A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 55 ns
based on its rated peak drain current 84A.
single MOSFETs transistor is 500 mΩ
a 1000V drain to source voltage (Vdss)
IXFK21N100F Applications
There are a lot of IXYS
IXFK21N100F applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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