IXFT80N15Q
- Mfr.Part #
- IXFT80N15Q
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 80A TO268
- Stock
- 5,144
- In Stock :
- 5,144
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JEDEC-95 Code :
- TO-268
- JESD-609 Code :
- e3
- Power Dissipation (Max) :
- 360W (Tc)
- Package :
- Tube
- Drain to Source Voltage (Vdss) :
- 150 V
- Manufacturer :
- IXYS Corporation
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- FET Feature :
- -
- ECCN Code :
- EAR99
- Fall Time (Typ) :
- 20 ns
- Polarity/Channel Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 22.5m Ω @ 40A, 10V
- Transistor Element Material :
- SILICON
- DS Breakdown Voltage-Min :
- 150 V
- JESD-30 Code :
- R-PSSO-G2
- Gate to Source Voltage (Vgs) :
- 20V
- Case Connection :
- DRAIN
- Number of Terminals :
- 2
- RoHS Status :
- RoHS Compliant
- Surface Mount :
- yes
- Reach Compliance Code :
- Compliant
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Packaging :
- Tube
- Package Shape :
- RECTANGULAR
- Input Capacitance (Ciss) (Max) @ Vds :
- 4500pF @ 25V
- Rise Time :
- 55ns
- Number of Terminations :
- 2
- Additional Feature :
- AVALANCHE RATED
- Qualification Status :
- Not Qualified
- Operating Temperature :
- -55°C~150°C TJ
- FET Type :
- N-Channel
- Supplier Device Package :
- TO-268AA
- Element Configuration :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Mount :
- Surface Mount
- Published :
- 2001
- Pbfree Code :
- yes
- Turn-Off Delay Time :
- 68 ns
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Series :
- HiPerFET™
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Finish :
- PURE TIN
- Power Dissipation-Max :
- 360W Tc
- Power Dissipation :
- 360W
- Gate Charge (Qg) (Max) @ Vgs :
- 180nC @ 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drain to Source Breakdown Voltage :
- 150V
- Drain-source On Resistance-Max :
- 0.0225Ohm
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Continuous Drain Current (ID) :
- 80A
- Pulsed Drain Current-Max (IDM) :
- 320A
- Terminal Position :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Vgs (Max) :
- ±20V
- Pin Count :
- 4
- Base Product Number :
- IXFT80
- Product Status :
- Obsolete
- Datasheets
- IXFT80N15Q

N-Channel Tube 22.5m Ω @ 40A, 10V ±20V 4500pF @ 25V 180nC @ 10V 150 V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXFT80N15Q Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.A device's maximum input capacitance is 4500pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 80A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=150V, and this device has a drain-to-source breakdown voltage of 150V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 68 ns.Its maximum pulsed drain current is 320A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 150 V.To operate this transistor, you need to apply a 150 V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXFT80N15Q Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 68 ns
based on its rated peak drain current 320A.
a 150 V drain to source voltage (Vdss)
IXFT80N15Q Applications
There are a lot of IXYS
IXFT80N15Q applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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