IXTA05N100

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Mfr.Part #
IXTA05N100
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 1000V 750MA TO263
Stock
29,896
In Stock :
29,896

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
RoHS Status :
ROHS3 Compliant
Surface Mount :
yes
Rise Time :
19ns
Number of Elements :
1
Width :
10.41 mm
JESD-609 Code :
e3
Channel Mode :
Enhancement
Gate to Source Voltage (Vgs) :
30V
Power Dissipation-Max (Abs) :
40 W
Pin Count :
4
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Turn-Off Delay Time :
40 ns
Additional Feature :
AVALANCHE RATED
Power Dissipation :
40W
Configuration :
Single
Pbfree Code :
yes
Resistance :
17mOhm
Transistor Application :
SWITCHING
Input Capacitance (Ciss) (Max) @ Vds :
260pF @ 25V
Terminal Finish :
Matte Tin (Sn)
Terminal Position :
Single
Case Connection :
DRAIN
FET Type :
N-Channel
Terminal Form :
Gull wing
JESD-30 Code :
R-PSSO-G2
Pulsed Drain Current-Max (IDM) :
3A
Product Type :
MOSFET
Operating Temperature :
-55°C~150°C TJ
Reach Compliance Code :
not_compliant
Element Configuration :
Single
JEDEC-95 Code :
TO-263AA
Type :
High Voltage Power MOSFET
Avalanche Energy Rating (Eas) :
100 mJ
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Pins :
3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Base Product Number :
IXTA05
Gate Charge (Qg) (Max) @ Vgs :
7.8nC @ 10V
Polarity/Channel Type :
N-Channel
Mounting Type :
Surface Mount
Factory Lead Time :
28 Weeks
Rds On (Max) @ Id, Vgs :
17 Ω @ 375mA, 10V
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Power Dissipation (Max) :
40W (Tc)
Drain-source On Resistance-Max :
17 Ω
Continuous Drain Current (ID) :
750mA
Transistor Element Material :
SILICON
FET Feature :
--
Product Status :
Active
Operating Mode :
ENHANCEMENT MODE
Published :
2008
Length :
9.65 mm
Mounting Style :
SMD/SMT
Brand :
IXYS
Packaging :
Tube
Lead Free :
Lead Free
Number of Channels :
1 Channel
Package :
Tube
Transistor Type :
1 N-Channel
Minimum Operating Temperature :
- 55 C
Height :
4.83 mm
Transistor Polarity :
N-Channel
Vgs (Max) :
±30V
Manufacturer :
IXYS
Product Category :
MOSFET
Mount :
Surface Mount
Current - Continuous Drain (Id) @ 25°C :
750mA Tc
Drain to Source Breakdown Voltage :
1kV
Drain Current-Max (Abs) (ID) :
0.75A
Number of Terminals :
2
Number of Terminations :
2
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package :
TO-263 (IXTA)
Drain to Source Voltage (Vdss) :
1000V
Power Dissipation-Max :
40W Tc
Series :
--
Maximum Operating Temperature :
+ 150 C
Fall Time (Typ) :
28 ns
Qualification Status :
Not Qualified
ECCN Code :
EAR99
DS Breakdown Voltage-Min :
1000 V
Package Shape :
RECTANGULAR
Datasheets
IXTA05N100
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA05N100 from Xinshop,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Type:High Voltage Power MOSFET, Number of Pins:3, Mounting Type:Surface Mount, Number of Channels:1 Channel, Number of Terminations:2, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, IXTA05N100 pinout, IXTA05N100 datasheet PDF, IXTA05N100 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA05N100 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA05N100


N-Channel Tube 17 Ω @ 375mA, 10V ±30V 260pF @ 25V 7.8nC @ 10V 1000V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA05N100 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 100 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 260pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 1kV drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 1kV.There is no drain current on this device since the maximum continuous current it can conduct is 0.75A.As a result of its turn-off delay time, which is 40 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 3A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 1000 V, it should remain above the 1000 V level.The transistor must receive a 1000V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXTA05N100 Features


the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 750mA
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 3A.
a 1000V drain to source voltage (Vdss)


IXTA05N100 Applications


There are a lot of IXYS
IXTA05N100 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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