IXTA05N100
- Mfr.Part #
- IXTA05N100
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 750MA TO263
- Stock
- 29,896
- In Stock :
- 29,896
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Surface Mount :
- yes
- Rise Time :
- 19ns
- Number of Elements :
- 1
- Width :
- 10.41 mm
- JESD-609 Code :
- e3
- Channel Mode :
- Enhancement
- Gate to Source Voltage (Vgs) :
- 30V
- Power Dissipation-Max (Abs) :
- 40 W
- Pin Count :
- 4
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Turn-Off Delay Time :
- 40 ns
- Additional Feature :
- AVALANCHE RATED
- Power Dissipation :
- 40W
- Configuration :
- Single
- Pbfree Code :
- yes
- Resistance :
- 17mOhm
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 260pF @ 25V
- Terminal Finish :
- Matte Tin (Sn)
- Terminal Position :
- Single
- Case Connection :
- DRAIN
- FET Type :
- N-Channel
- Terminal Form :
- Gull wing
- JESD-30 Code :
- R-PSSO-G2
- Pulsed Drain Current-Max (IDM) :
- 3A
- Product Type :
- MOSFET
- Operating Temperature :
- -55°C~150°C TJ
- Reach Compliance Code :
- not_compliant
- Element Configuration :
- Single
- JEDEC-95 Code :
- TO-263AA
- Type :
- High Voltage Power MOSFET
- Avalanche Energy Rating (Eas) :
- 100 mJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Product Number :
- IXTA05
- Gate Charge (Qg) (Max) @ Vgs :
- 7.8nC @ 10V
- Polarity/Channel Type :
- N-Channel
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 28 Weeks
- Rds On (Max) @ Id, Vgs :
- 17 Ω @ 375mA, 10V
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Power Dissipation (Max) :
- 40W (Tc)
- Drain-source On Resistance-Max :
- 17 Ω
- Continuous Drain Current (ID) :
- 750mA
- Transistor Element Material :
- SILICON
- FET Feature :
- --
- Product Status :
- Active
- Operating Mode :
- ENHANCEMENT MODE
- Published :
- 2008
- Length :
- 9.65 mm
- Mounting Style :
- SMD/SMT
- Brand :
- IXYS
- Packaging :
- Tube
- Lead Free :
- Lead Free
- Number of Channels :
- 1 Channel
- Package :
- Tube
- Transistor Type :
- 1 N-Channel
- Minimum Operating Temperature :
- - 55 C
- Height :
- 4.83 mm
- Transistor Polarity :
- N-Channel
- Vgs (Max) :
- ±30V
- Manufacturer :
- IXYS
- Product Category :
- MOSFET
- Mount :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 750mA Tc
- Drain to Source Breakdown Voltage :
- 1kV
- Drain Current-Max (Abs) (ID) :
- 0.75A
- Number of Terminals :
- 2
- Number of Terminations :
- 2
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package :
- TO-263 (IXTA)
- Drain to Source Voltage (Vdss) :
- 1000V
- Power Dissipation-Max :
- 40W Tc
- Series :
- --
- Maximum Operating Temperature :
- + 150 C
- Fall Time (Typ) :
- 28 ns
- Qualification Status :
- Not Qualified
- ECCN Code :
- EAR99
- DS Breakdown Voltage-Min :
- 1000 V
- Package Shape :
- RECTANGULAR
- Datasheets
- IXTA05N100

N-Channel Tube 17 Ω @ 375mA, 10V ±30V 260pF @ 25V 7.8nC @ 10V 1000V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA05N100 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 100 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 260pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 1kV drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 1kV.There is no drain current on this device since the maximum continuous current it can conduct is 0.75A.As a result of its turn-off delay time, which is 40 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 3A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 1000 V, it should remain above the 1000 V level.The transistor must receive a 1000V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXTA05N100 Features
the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 750mA
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 3A.
a 1000V drain to source voltage (Vdss)
IXTA05N100 Applications
There are a lot of IXYS
IXTA05N100 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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