IXTA08N100P

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Mfr.Part #
IXTA08N100P
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 1000V 800MA TO263
Stock
29,253
In Stock :
29,253

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Elements :
1
Number of Channels :
1 Channel
Transistor Type :
1 N-Channel
Package Shape :
RECTANGULAR
Drain to Source Voltage (Vdss) :
1000V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
FET Type :
N-Channel
Brand :
IXYS
Vgs(th) (Max) @ Id :
4V @ 50μA
Turn-Off Delay Time :
35 ns
Continuous Drain Current (ID) :
800mA
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Factory Lead Time :
28 Weeks
Product Status :
Active
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Operating Mode :
ENHANCEMENT MODE
Current - Continuous Drain (Id) @ 25°C :
800mA Tc
RoHS Status :
ROHS3 Compliant
Drain Current-Max (Abs) (ID) :
0.8A
Input Capacitance (Ciss) (Max) @ Vds :
240pF @ 25V
Terminal Position :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Breakdown Voltage :
1kV
Mounting Type :
Surface Mount
Width :
9.65 mm
JESD-30 Code :
R-PSSO-G2
Manufacturer :
IXYS
Product Category :
MOSFET
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
JEDEC-95 Code :
TO-263AB
Configuration :
Single
Power Dissipation-Max (Abs) :
42 W
Operating Temperature :
-55°C~150°C TJ
Published :
2009
Additional Feature :
AVALANCHE RATED
Gate Charge (Qg) (Max) @ Vgs :
11.3nC @ 10V
Height :
4.83 mm
Length :
10.41 mm
JESD-609 Code :
e3
ECCN Code :
EAR99
Avalanche Energy Rating (Eas) :
80 mJ
Power Dissipation-Max :
42W Tc
Rds On (Max) @ Id, Vgs :
20 Ω @ 500mA, 10V
Case Connection :
DRAIN
Qualification Status :
Not Qualified
Number of Terminations :
2
Lead Free :
Lead Free
Transistor Element Material :
SILICON
Number of Terminals :
2
Gate to Source Voltage (Vgs) :
20V
DS Breakdown Voltage-Min :
1000 V
Terminal Form :
Gull wing
Pulsed Drain Current-Max (IDM) :
1.8A
Packaging :
Tube
Series :
Polar™
Vgs (Max) :
±20V
Pin Count :
4
Transistor Application :
SWITCHING
Terminal Finish :
Matte Tin (Sn)
Surface Mount :
yes
Package :
Tube
Rise Time :
37ns
Pbfree Code :
yes
Minimum Operating Temperature :
- 55 C
Reach Compliance Code :
not_compliant
Drive Voltage (Max Rds On,Min Rds On) :
10V
Product Type :
MOSFET
Fall Time (Typ) :
34 ns
Power Dissipation (Max) :
42W (Tc)
FET Feature :
--
Maximum Operating Temperature :
+ 150 C
Supplier Device Package :
TO-263 (IXTA)
Power Dissipation :
42W
Base Product Number :
IXTA08
Mount :
Surface Mount
Transistor Polarity :
N-Channel
Channel Mode :
Enhancement
Drain-source On Resistance-Max :
20 Ω
Mounting Style :
SMD/SMT
Element Configuration :
Single
Polarity/Channel Type :
N-Channel
Datasheets
IXTA08N100P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA08N100P from Xinshop,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Operating Temperature:-55°C~150°C TJ, Number of Terminations:2, IXTA08N100P pinout, IXTA08N100P datasheet PDF, IXTA08N100P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA08N100P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA08N100P


N-Channel Tube 20 Ω @ 500mA, 10V ±20V 240pF @ 25V 11.3nC @ 10V 1000V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA08N100P Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 80 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 240pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 800mA. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=1kV. And this device has 1kV drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 0.8A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 35 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 1.8A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 1000 V in order to maintain normal operation.Operating this transistor requires a 1000V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXTA08N100P Features


the avalanche energy rating (Eas) is 80 mJ
a continuous drain current (ID) of 800mA
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 35 ns
based on its rated peak drain current 1.8A.
a 1000V drain to source voltage (Vdss)


IXTA08N100P Applications


There are a lot of IXYS
IXTA08N100P applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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