IXTA08N100P
- Mfr.Part #
- IXTA08N100P
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 800MA TO263
- Stock
- 29,253
- In Stock :
- 29,253
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Number of Channels :
- 1 Channel
- Transistor Type :
- 1 N-Channel
- Package Shape :
- RECTANGULAR
- Drain to Source Voltage (Vdss) :
- 1000V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Brand :
- IXYS
- Vgs(th) (Max) @ Id :
- 4V @ 50μA
- Turn-Off Delay Time :
- 35 ns
- Continuous Drain Current (ID) :
- 800mA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Factory Lead Time :
- 28 Weeks
- Product Status :
- Active
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 800mA Tc
- RoHS Status :
- ROHS3 Compliant
- Drain Current-Max (Abs) (ID) :
- 0.8A
- Input Capacitance (Ciss) (Max) @ Vds :
- 240pF @ 25V
- Terminal Position :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- 1kV
- Mounting Type :
- Surface Mount
- Width :
- 9.65 mm
- JESD-30 Code :
- R-PSSO-G2
- Manufacturer :
- IXYS
- Product Category :
- MOSFET
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- JEDEC-95 Code :
- TO-263AB
- Configuration :
- Single
- Power Dissipation-Max (Abs) :
- 42 W
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2009
- Additional Feature :
- AVALANCHE RATED
- Gate Charge (Qg) (Max) @ Vgs :
- 11.3nC @ 10V
- Height :
- 4.83 mm
- Length :
- 10.41 mm
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Avalanche Energy Rating (Eas) :
- 80 mJ
- Power Dissipation-Max :
- 42W Tc
- Rds On (Max) @ Id, Vgs :
- 20 Ω @ 500mA, 10V
- Case Connection :
- DRAIN
- Qualification Status :
- Not Qualified
- Number of Terminations :
- 2
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Number of Terminals :
- 2
- Gate to Source Voltage (Vgs) :
- 20V
- DS Breakdown Voltage-Min :
- 1000 V
- Terminal Form :
- Gull wing
- Pulsed Drain Current-Max (IDM) :
- 1.8A
- Packaging :
- Tube
- Series :
- Polar™
- Vgs (Max) :
- ±20V
- Pin Count :
- 4
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Matte Tin (Sn)
- Surface Mount :
- yes
- Package :
- Tube
- Rise Time :
- 37ns
- Pbfree Code :
- yes
- Minimum Operating Temperature :
- - 55 C
- Reach Compliance Code :
- not_compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Product Type :
- MOSFET
- Fall Time (Typ) :
- 34 ns
- Power Dissipation (Max) :
- 42W (Tc)
- FET Feature :
- --
- Maximum Operating Temperature :
- + 150 C
- Supplier Device Package :
- TO-263 (IXTA)
- Power Dissipation :
- 42W
- Base Product Number :
- IXTA08
- Mount :
- Surface Mount
- Transistor Polarity :
- N-Channel
- Channel Mode :
- Enhancement
- Drain-source On Resistance-Max :
- 20 Ω
- Mounting Style :
- SMD/SMT
- Element Configuration :
- Single
- Polarity/Channel Type :
- N-Channel
- Datasheets
- IXTA08N100P

N-Channel Tube 20 Ω @ 500mA, 10V ±20V 240pF @ 25V 11.3nC @ 10V 1000V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA08N100P Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 80 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 240pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 800mA. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=1kV. And this device has 1kV drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 0.8A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 35 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 1.8A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 1000 V in order to maintain normal operation.Operating this transistor requires a 1000V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXTA08N100P Features
the avalanche energy rating (Eas) is 80 mJ
a continuous drain current (ID) of 800mA
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 35 ns
based on its rated peak drain current 1.8A.
a 1000V drain to source voltage (Vdss)
IXTA08N100P Applications
There are a lot of IXYS
IXTA08N100P applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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