IXTN200N10L2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Minimum Operating Temperature :

-55 °C

Brand :

IXYS

Drain to Source Voltage (Vdss) :

100V

Number of Terminations :

4

Packaging :

Bulk

Pbfree Code :

yes

Supplier Device Package :

SOT-227B

Terminal Form :

UNSPECIFIED

Base Product Number :

IXTN200

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Height :

9.6mm

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

23000pF @ 25V

Drain-source On Resistance-Max :

0.011 Ω

Drive Voltage (Max Rds On,Min Rds On) :

10V

Product Category :

Discrete Semiconductor Modules

Number of Channels :

1 Channel

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

500A

Power Dissipation (Max) :

830W (Tc)

Published :

2010

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

11m Ω @ 100A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Polarity/Channel Type :

N-Channel

Maximum Operating Temperature :

+150 °C

Series :

Linear L2™

Continuous Drain Current (ID) :

178A

Product :

Power MOSFET Modules

Factory Lead Time :

28 Weeks

Drain to Source Breakdown Voltage :

100V

Mount :

Chassis Mount

Case Connection :

Isolated

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Type :

Linear Power MOSFET

Terminal Finish :

Nickel

Transistor Application :

SWITCHING

Package Type :

SOT-227

Package / Case :

SOT-227-4, miniBLOC

Mounting Type :

Chassis Mount

Product Type :

Discrete Semiconductor Modules

RoHS Status :

ROHS3 Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Channel Type :

N

FET Type :

N-Channel

Package :

Bulk

Power Dissipation-Max :

830W Tc

Package Shape :

RECTANGULAR

Avalanche Energy Rating (Eas) :

5000 mJ

JESD-30 Code :

R-PUFM-X4

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

100 V

Vgs (Max) :

±20V

Drain Current-Max (Abs) (ID) :

178 A

RoHS :

Details

Vgs(th) (Max) @ Id :

4.5V @ 3mA

Width :

25.07mm

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max (Abs) :

830 W

Power Dissipation :

830W

Transistor Element Material :

SILICON

Length :

38.23mm

Mounting Style :

Chassis Mount

Resistance :

11mOhm

Reach Compliance Code :

Unknown

Terminal Position :

UPPER

Additional Feature :

AVALANCHE RATED, UL RECOGNIZED

Channel Mode :

Enhancement

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Manufacturer :

IXYS

FET Feature :

--

Pin Count :

4

Number of Pins :

4

Current - Continuous Drain (Id) @ 25°C :

178A Tc

Transistor Polarity :

N-Channel

Surface Mount :

No

Number of Terminals :

4

Gate Charge (Qg) (Max) @ Vgs :

540nC @ 10V

Product Status :

Active

ECCN Code :

EAR99

Number of Elements per Chip :

1