IXTN22N100L

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

4

Mounting Type :

Chassis Mount

Turn On Delay Time :

36 ns

RoHS :

Details

Base Product Number :

IXTN22

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminals :

4

Continuous Drain Current (ID) :

22A

Additional Feature :

UL RECOGNIZED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

4

JESD-30 Code :

R-PUFM-X4

Power Dissipation-Max (Abs) :

700 W

Transistor Application :

SWITCHING

Product :

Power MOSFET Modules

Supplier Device Package :

SOT-227B

Surface Mount :

No

Drain to Source Voltage (Vdss) :

1000V

Drain-source On Resistance-Max :

0.6 Ω

Terminal Form :

UNSPECIFIED

Product Status :

Active

Turn-Off Delay Time :

80 ns

FET Feature :

--

Channel Type :

N

Package Shape :

RECTANGULAR

Input Capacitance (Ciss) (Max) @ Vds :

7050pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Manufacturer :

IXYS

Case Connection :

Isolated

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

22A Tc

Rds On (Max) @ Id, Vgs :

600m Ω @ 11A, 20V

Mounting Style :

Chassis Mount

Transistor Polarity :

N-Channel

Resistance :

600mOhm

Package Type :

SOT-227

Power Dissipation-Max :

700W Tc

Product Category :

Discrete Semiconductor Modules

Channel Mode :

Enhancement

Transistor Element Material :

SILICON

Height :

9.6mm

Number of Elements per Chip :

1

Mount :

Chassis Mount, Panel

Brand :

IXYS

Packaging :

Tube

Drain to Source Breakdown Voltage :

1kV

Package :

Tube

Minimum Operating Temperature :

-55 °C

Qualification Status :

Not Qualified

Length :

38.2mm

Pin Count :

4

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

30V

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Rise Time :

35ns

Pulsed Drain Current-Max (IDM) :

50A

Power Dissipation (Max) :

700W (Tc)

Avalanche Energy Rating (Eas) :

1500 mJ

Polarity/Channel Type :

N-Channel

Series :

--

Terminal Position :

UPPER

Product Type :

Discrete Semiconductor Modules

Configuration :

Single

Type :

Linear Power MOSFET

Published :

2010

DS Breakdown Voltage-Min :

1000 V

Gate Charge (Qg) (Max) @ Vgs :

270nC @ 15V

Terminal Finish :

Nickel (Ni)

Number of Channels :

1 Channel

Package / Case :

SOT-227-4, miniBLOC

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Fall Time (Typ) :

50 ns

Maximum Operating Temperature :

+150 °C

Power Dissipation :

700W

Width :

25.07mm

Drain Current-Max (Abs) (ID) :

22 A

Reach Compliance Code :

Compliant

Vgs (Max) :

±30V