IXTT20P50P

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Mfr.Part #
IXTT20P50P
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET P-CH 500V 20A TO268
Stock
106
In Stock :
106

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Product Status :
Active
Current - Continuous Drain (Id) @ 25°C :
20A Tc
Packaging :
Tube
Package Shape :
RECTANGULAR
Transistor Application :
SWITCHING
Configuration :
SINGLE WITH BUILT-IN DIODE
Product Type :
MOSFET
Brand :
IXYS
Power Dissipation (Max) :
460W (Tc)
Pin Count :
4
Continuous Drain Current (ID) :
20A
Package :
Tube
Number of Terminals :
2
Mount :
Surface Mount
Rise Time :
32 ns
RoHS Status :
ROHS3 Compliant
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Additional Feature :
AVALANCHE RATED
Supplier Device Package :
TO-268
Input Capacitance (Ciss) (Max) @ Vds :
5120pF @ 25V
DS Breakdown Voltage-Min :
500V
Length :
14 mm
Drain to Source Voltage (Vdss) :
500V
Minimum Operating Temperature :
- 55 C
Vgs(th) (Max) @ Id :
4V @ 250µA
Drain Current-Max (Abs) (ID) :
20 A
JESD-609 Code :
e3
Maximum Operating Temperature :
+ 150 C
Mounting Type :
Surface Mount
Terminal Finish :
Matte Tin (Sn)
Operating Temperature :
-55°C~150°C TJ
Drain-source On Resistance-Max :
0.45Ohm
Pulsed Drain Current-Max (IDM) :
60A
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Height :
5.1 mm
Gate Charge (Qg) (Max) @ Vgs :
103nC @ 10V
Product Category :
MOSFET
Base Product Number :
IXTT20
Manufacturer :
IXYS
Qualification Status :
Not Qualified
Type :
PolarP Power MOSFET
Power Dissipation-Max :
460W Tc
Operating Mode :
ENHANCEMENT MODE
Surface Mount :
yes
Factory Lead Time :
24 Weeks
Case Connection :
DRAIN
Terminal Position :
Single
Transistor Element Material :
SILICON
FET Type :
P-Channel
Transistor Polarity :
P-Channel
Avalanche Energy Rating (Eas) :
2500 mJ
Vgs (Max) :
±20V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Channel Mode :
Enhancement
Terminal Form :
Gull wing
Tradename :
PolarP
Drive Voltage (Max Rds On,Min Rds On) :
10V
ECCN Code :
EAR99
Transistor Type :
1 P-Channel
Series :
PolarP™
Number of Channels :
1 Channel
FET Feature :
--
Polarity/Channel Type :
P-Channel
Number of Terminations :
2
Mounting Style :
SMD/SMT
Number of Elements :
1
Rds On (Max) @ Id, Vgs :
450m Ω @ 10A, 10V
JEDEC-95 Code :
TO-268AA
Pbfree Code :
yes
Reach Compliance Code :
not_compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max (Abs) :
460 W
Number of Pins :
3
Width :
16.05 mm
FET Technology :
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code :
R-PSSO-G2
Published :
2012
RoHS :
Details
Datasheets
IXTT20P50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTT20P50P from Xinshop,where excellence meets affordability. This product stands out with its Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Type:PolarP Power MOSFET, Number of Channels:1 Channel, Number of Terminations:2, Number of Pins:3, IXTT20P50P pinout, IXTT20P50P datasheet PDF, IXTT20P50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTT20P50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTT20P50P


P-Channel Tube 450m Ω @ 10A, 10V ±20V 5120pF @ 25V 103nC @ 10V 500V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXTT20P50P Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 5120pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 20A. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 20 A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 60A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 500V in order to maintain normal operation.Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXTT20P50P Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 20A
based on its rated peak drain current 60A.
a 500V drain to source voltage (Vdss)


IXTT20P50P Applications


There are a lot of IXYS
IXTT20P50P applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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