IXTT20P50P
- Mfr.Part #
- IXTT20P50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET P-CH 500V 20A TO268
- Stock
- 106
- In Stock :
- 106
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Product Status :
- Active
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Packaging :
- Tube
- Package Shape :
- RECTANGULAR
- Transistor Application :
- SWITCHING
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Product Type :
- MOSFET
- Brand :
- IXYS
- Power Dissipation (Max) :
- 460W (Tc)
- Pin Count :
- 4
- Continuous Drain Current (ID) :
- 20A
- Package :
- Tube
- Number of Terminals :
- 2
- Mount :
- Surface Mount
- Rise Time :
- 32 ns
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Additional Feature :
- AVALANCHE RATED
- Supplier Device Package :
- TO-268
- Input Capacitance (Ciss) (Max) @ Vds :
- 5120pF @ 25V
- DS Breakdown Voltage-Min :
- 500V
- Length :
- 14 mm
- Drain to Source Voltage (Vdss) :
- 500V
- Minimum Operating Temperature :
- - 55 C
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drain Current-Max (Abs) (ID) :
- 20 A
- JESD-609 Code :
- e3
- Maximum Operating Temperature :
- + 150 C
- Mounting Type :
- Surface Mount
- Terminal Finish :
- Matte Tin (Sn)
- Operating Temperature :
- -55°C~150°C TJ
- Drain-source On Resistance-Max :
- 0.45Ohm
- Pulsed Drain Current-Max (IDM) :
- 60A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Height :
- 5.1 mm
- Gate Charge (Qg) (Max) @ Vgs :
- 103nC @ 10V
- Product Category :
- MOSFET
- Base Product Number :
- IXTT20
- Manufacturer :
- IXYS
- Qualification Status :
- Not Qualified
- Type :
- PolarP Power MOSFET
- Power Dissipation-Max :
- 460W Tc
- Operating Mode :
- ENHANCEMENT MODE
- Surface Mount :
- yes
- Factory Lead Time :
- 24 Weeks
- Case Connection :
- DRAIN
- Terminal Position :
- Single
- Transistor Element Material :
- SILICON
- FET Type :
- P-Channel
- Transistor Polarity :
- P-Channel
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Vgs (Max) :
- ±20V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Channel Mode :
- Enhancement
- Terminal Form :
- Gull wing
- Tradename :
- PolarP
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- ECCN Code :
- EAR99
- Transistor Type :
- 1 P-Channel
- Series :
- PolarP™
- Number of Channels :
- 1 Channel
- FET Feature :
- --
- Polarity/Channel Type :
- P-Channel
- Number of Terminations :
- 2
- Mounting Style :
- SMD/SMT
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 450m Ω @ 10A, 10V
- JEDEC-95 Code :
- TO-268AA
- Pbfree Code :
- yes
- Reach Compliance Code :
- not_compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max (Abs) :
- 460 W
- Number of Pins :
- 3
- Width :
- 16.05 mm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- JESD-30 Code :
- R-PSSO-G2
- Published :
- 2012
- RoHS :
- Details
- Datasheets
- IXTT20P50P

P-Channel Tube 450m Ω @ 10A, 10V ±20V 5120pF @ 25V 103nC @ 10V 500V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTT20P50P Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 5120pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 20A. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 20 A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 60A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 500V in order to maintain normal operation.Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXTT20P50P Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 20A
based on its rated peak drain current 60A.
a 500V drain to source voltage (Vdss)
IXTT20P50P Applications
There are a lot of IXYS
IXTT20P50P applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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