IXTT2N170D2
- Mfr.Part #
- IXTT2N170D2
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 1700V 2A TO268
- Stock
- 345
- In Stock :
- 345
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Brand :
- IXYS
- Input Capacitance (Ciss) (Max) @ Vds :
- 3650pF @ 25V
- Configuration :
- Single
- Height :
- 5.1 mm
- Minimum Operating Temperature :
- - 55 C
- Series :
- --
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation-Max :
- 568W Tc
- Power Dissipation (Max) :
- 568W (Tc)
- Mount :
- Surface Mount
- Vgs (Max) :
- ±20V
- RoHS :
- Details
- Drive Voltage (Max Rds On, Min Rds On) :
- --
- Published :
- 2012
- Reach Compliance Code :
- Unknown
- Terminal Finish :
- Matte Tin (Sn)
- Width :
- 16.05 mm
- Manufacturer :
- IXYS
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Factory Lead Time :
- 24 Weeks
- Length :
- 14 mm
- Product Category :
- MOSFET
- Channel Mode :
- Enhancement
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Drain to Source Breakdown Voltage :
- 1.7kV
- Continuous Drain Current (ID) :
- 2A
- Turn-Off Delay Time :
- 33 ns
- Number of Channels :
- 1 Channel
- Mounting Style :
- SMD/SMT
- Packaging :
- Tube
- Mounting Type :
- Surface Mount
- Transistor Polarity :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 2A Tj
- Product Status :
- Active
- Operating Temperature :
- -55°C~150°C TJ
- Base Product Number :
- IXTT2
- Product Type :
- MOSFET
- Drain to Source Voltage (Vdss) :
- 1700V
- Rds On (Max) @ Id, Vgs :
- 6.5 Ω @ 1A, 0V
- Fall Time (Typ) :
- 106 ns
- JESD-609 Code :
- e3
- Vgs(th) (Max) @ Id :
- --
- Rise Time :
- 58ns
- FET Feature :
- Depletion Mode
- Supplier Device Package :
- TO-268
- Maximum Operating Temperature :
- + 150 C
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 5V
- Package :
- Tube
- Turn On Delay Time :
- 28 ns
- Lead Free :
- Lead Free
- Type :
- Depletion Mode MOSFET
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- IXTT2N170D2

N-Channel Tube 6.5 Ω @ 1A, 0V ±20V 3650pF @ 25V 110nC @ 5V 1700V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTT2N170D2 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3650pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 2A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 1.7kV, and this device has a drainage-to-source breakdown voltage of 1.7kVV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 33 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 28 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 1700V is required between drain and source (Vdss).
IXTT2N170D2 Features
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 1.7kV voltage
the turn-off delay time is 33 ns
a 1700V drain to source voltage (Vdss)
IXTT2N170D2 Applications
There are a lot of IXYS
IXTT2N170D2 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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