IXTT52N30P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Pin Count :

4

Product Type :

MOSFET

Drain to Source Resistance :

66 mΩ

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

400W

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Minimum Operating Temperature :

- 55 C

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

3490pF @ 25V

Case Connection :

DRAIN

Base Product Number :

IXTT52

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Terminal Form :

Gull wing

Radiation Hardening :

No

Continuous Drain Current (ID) :

52A

Product Status :

Active

Reach Compliance Code :

not_compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Factory Lead Time :

24 Weeks

Qualification Status :

Not Qualified

JESD-609 Code :

e3

Product Category :

MOSFET

Transistor Element Material :

SILICON

Mounting Style :

SMD/SMT

Published :

2006

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Supplier Device Package :

TO-268

Max Power Dissipation :

400 W

JESD-30 Code :

R-PSSO-G2

Rds On Max :

66 mΩ

Max Operating Temperature :

150 °C

Power Dissipation (Max) :

400W (Tc)

Package Shape :

RECTANGULAR

Element Configuration :

Single

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

52 A

Packaging :

Tube

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Drain-source On Resistance-Max :

0.066Ohm

JEDEC-95 Code :

TO-268AA

Number of Channels :

1 Channel

Configuration :

Single

Min Operating Temperature :

-55 °C

Additional Feature :

AVALANCHE RATED

Vgs (Max) :

±20V

Length :

16.05 mm

Power Dissipation-Max :

400W Tc

Current - Continuous Drain (Id) @ 25°C :

52A Tc

Input Capacitance :

3.49 nF

Fall Time (Typ) :

20 ns

DS Breakdown Voltage-Min :

300 V

Manufacturer :

IXYS

Rds On (Max) @ Id, Vgs :

66m Ω @ 500mA, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Surface Mount

Width :

14 mm

Package :

Tube

Turn-Off Delay Time :

60 ns

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

5V @ 250μA

FET Feature :

--

Avalanche Energy Rating (Eas) :

1000 mJ

Polarity/Channel Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

2

Height :

5.1 mm

Series :

PolarHT™

Number of Terminals :

2

Transistor Type :

1 N-Channel

Pulsed Drain Current-Max (IDM) :

150 A

Transistor Polarity :

N-Channel

Channel Mode :

Enhancement

Drain to Source Voltage (Vdss) :

300 V

Rise Time :

22ns

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

300V

Power Dissipation-Max (Abs) :

400 W

RoHS :

Compliant

Terminal Finish :

Matte Tin (Sn)

Maximum Operating Temperature :

+ 150 C

Brand :

IXYS

Terminal Position :

Single

Surface Mount :

yes