IXTT96N15P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

JEDEC-95 Code :

TO-268AA

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Polarity/Channel Type :

N-Channel

Vgs(th) (Max) @ Id :

5V @ 250μA

Terminal Position :

Single

Width :

14 mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

96A Tc

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

24m Ω @ 500mA, 10V

Operating Temperature :

-55°C~175°C TJ

Input Capacitance :

3.5 nF

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

480W Tc

Surface Mount :

yes

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Package Shape :

RECTANGULAR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Published :

2006

Reach Compliance Code :

not_compliant

Transistor Type :

1 N-Channel

Transistor Application :

SWITCHING

Length :

16.05 mm

Mount :

Surface Mount

Number of Terminations :

2

Pulsed Drain Current-Max (IDM) :

250A

Rds On Max :

24 mΩ

Maximum Operating Temperature :

+ 175 C

Max Power Dissipation :

480 W

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Product Status :

Active

Min Operating Temperature :

-55 °C

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Max Operating Temperature :

175 °C

Supplier Device Package :

TO-268

Power Dissipation :

480W

Manufacturer :

IXYS

Base Product Number :

IXTT96

Rise Time :

33ns

Height :

5.1 mm

ECCN Code :

EAR99

Series :

PolarHT™

Number of Terminals :

2

Channel Mode :

Enhancement

Mounting Type :

Surface Mount

Additional Feature :

AVALANCHE RATED

RoHS :

Compliant

JESD-609 Code :

e3

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

0.024Ohm

Drain to Source Voltage (Vdss) :

150 V

Turn-Off Delay Time :

66 ns

Qualification Status :

Not Qualified

Brand :

IXYS

Mounting Style :

SMD/SMT

Vgs (Max) :

±20V

Product Type :

MOSFET

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

1000 mJ

Terminal Finish :

Matte Tin (Sn)

Fall Time (Typ) :

18 ns

Number of Channels :

1 Channel

Transistor Polarity :

N-Channel

Configuration :

Single

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

3500pF @ 25V

DS Breakdown Voltage-Min :

150 V

Pin Count :

4

Minimum Operating Temperature :

- 55 C

Package :

Tube

Factory Lead Time :

24 Weeks

Packaging :

Tube

Subcategory :

MOSFETs

Product Category :

MOSFET

FET Feature :

--

Drain to Source Resistance :

24 mΩ

Drain to Source Breakdown Voltage :

150V

JESD-30 Code :

R-PSSO-G2

Power Dissipation (Max) :

480W (Tc)

Continuous Drain Current (ID) :

96A