IXTY01N100D

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Mfr.Part #
IXTY01N100D
Manufacturer
Littelfuse
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 1000V 400MA TO252AA
Stock
41,794
In Stock :
41,794

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Factory Lead Time :
24 Weeks
Radiation Hardening :
No
Series :
--
Channel Type :
N Channel
Element Configuration :
Single
Drain-source On Resistance-Max :
110 Ω
Number of Terminations :
2
Mounting Style :
SMD/SMT
Case Connection :
DRAIN
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-30 Code :
R-PSSO-G2
Package :
Tube
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Turn-Off Delay Time :
30 ns
Number of Terminals :
2
Gate Charge (Qg) (Max) @ Vgs :
5.8 nC @ 5 V
RoHS Status :
ROHS3 Compliant
Pin Count :
4
Terminal Finish :
Pure Tin (Sn)
Polarity/Channel Type :
N-Channel
Qualification :
-
Pbfree Code :
yes
Power Dissipation-Max (Abs) :
25 W
Vgs(th) (Max) @ Id :
--
Number of Pins :
3
Power Dissipation-Max :
1.1W Ta 25W Tc
Rds On (Max) @ Id, Vgs :
110 Ω @ 50mA, 0V
Number of Elements :
1
Power Dissipation :
1.1W
Power Dissipation (Max) :
1.1W (Ta), 25W (Tc)
Channel Mode :
Depletion
Base Product Number :
IXTY01
JEDEC-95 Code :
TO-252AA
Qualification Status :
Not Qualified
FET Feature :
Depletion Mode
Transistor Polarity :
N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
120pF @ 25V
Height :
2.38 mm
Product Status :
Active
Product :
MOSFET Small Signal
Surface Mount :
yes
DS Breakdown Voltage-Min :
1000 V
Reach Compliance Code :
Compliant
Drive Voltage (Max Rds On, Min Rds On) :
--
Number of Channels :
1 Channel
Continuous Drain Current Id :
400mA
Maximum Operating Temperature :
+ 150 C
FET Type :
N-Channel
Supplier Device Package :
TO-252, (D-Pak)
HTS Code :
8541.29.00.95
Mount :
Surface Mount
Rise Time :
6ns
Lead Free :
Lead Free
Terminal Position :
Single
Packaging :
Tube
Transistor Type :
1 N-Channel
Package Shape :
RECTANGULAR
Transistor Application :
SWITCHING
Continuous Drain Current (ID) :
100mA
Product Category :
MOSFET
Drain to Source Voltage (Vdss) :
1000V
Vgs (Max) :
±20V
Manufacturer :
IXYS
Minimum Operating Temperature :
- 55 C
Fall Time (Typ) :
6 ns
Resistance :
110Ohm
Current - Continuous Drain (Id) @ 25°C :
100mA Tc
Width :
6.22 mm
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Product Type :
MOSFET
Operating Mode :
Depletion Mode
Operating Temperature :
-55°C~150°C TJ
Mounting Type :
Surface Mount
Brand :
IXYS
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Length :
6.73 mm
Gate to Source Voltage (Vgs) :
20V
ECCN Code :
EAR99
Published :
2006
Terminal Form :
Gull wing
Transistor Element Material :
SILICON
Drain to Source Breakdown Voltage :
1kV
Configuration :
Single
Pulsed Drain Current-Max (IDM) :
0.4A
Datasheets
IXTY01N100D
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTY01N100D from Xinshop,where excellence meets affordability. This product stands out with its Number of Terminations:2, Number of Pins:3, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, IXTY01N100D pinout, IXTY01N100D datasheet PDF, IXTY01N100D amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTY01N100D ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTY01N100D


N-Channel Tube 110 Ω @ 50mA, 0V ±20V 120pF @ 25V 5.8 nC @ 5 V 1000V TO-252-3, DPak (2 Leads + Tab), SC-63

IXTY01N100D Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 120pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 100mA amps.In this device, the drain-source breakdown voltage is 1kV and VGS=1kV, so the drain-source breakdown voltage is 1kV in this case.It is [30 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 0.4A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 1000 V to maintain normal operation.To operate this transistor, you will need a 1000V drain to source voltage (Vdss).

IXTY01N100D Features


a continuous drain current (ID) of 100mA
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 30 ns
based on its rated peak drain current 0.4A.
a 1000V drain to source voltage (Vdss)


IXTY01N100D Applications


There are a lot of IXYS
IXTY01N100D applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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