IXTY08N100P

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Mfr.Part #
IXTY08N100P
Manufacturer
Littelfuse
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 1000V 800MA TO252
Stock
6,705
In Stock :
6,705

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Product Category :
MOSFET
Number of Elements :
1
Minimum Operating Temperature :
- 55 C
Number of Channels :
1 Channel
Gate Charge (Qg) (Max) @ Vgs :
11.3nC @ 10V
Transistor Application :
SWITCHING
Polarity/Channel Type :
N-Channel
RoHS :
Details
Min Operating Temperature :
-55 °C
Pulsed Drain Current-Max (IDM) :
1.8 A
JEDEC-95 Code :
TO-252
Supplier Device Package :
TO-252, (D-Pak)
Avalanche Energy Rating (Eas) :
80 mJ
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Element Configuration :
Single
Operating Mode :
ENHANCEMENT MODE
Continuous Drain Current (ID) :
800mA
Power Dissipation-Max :
42W Tc
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Vgs(th) (Max) @ Id :
4V @ 50μA
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Polarity :
N-Channel
Manufacturer :
IXYS
Factory Lead Time :
24 Weeks
Product Status :
Active
Pbfree Code :
yes
Drain-source On Resistance-Max :
20 Ω
Fall Time (Typ) :
34 ns
JESD-609 Code :
e3
Qualification Status :
Not Qualified
Length :
6.73 mm
Transistor Type :
1 N-Channel
Width :
6.22 mm
Pin Count :
4
Power Dissipation-Max (Abs) :
42 W
Configuration :
Single
Input Capacitance :
240 pF
Transistor Element Material :
SILICON
Additional Feature :
AVALANCHE RATED
Packaging :
Tube
ECCN Code :
EAR99
DS Breakdown Voltage-Min :
1000 V
Vgs (Max) :
±20V
Case Connection :
DRAIN
Drain to Source Resistance :
20 Ω
Channel Mode :
Enhancement
Product Type :
MOSFET
Number of Terminations :
2
Power Dissipation (Max) :
42W (Tc)
Rds On (Max) @ Id, Vgs :
20 Ω @ 500mA, 10V
Terminal Position :
Single
Mount :
Surface Mount
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package :
Tube
Drive Voltage (Max Rds On,Min Rds On) :
10V
Turn-Off Delay Time :
35 ns
Published :
2009
RoHS Status :
ROHS3 Compliant
Radiation Hardening :
No
Base Product Number :
IXTY08
Reach Compliance Code :
Compliant
Brand :
IXYS
Height :
2.38 mm
Input Capacitance (Ciss) (Max) @ Vds :
240pF @ 25V
Operating Temperature :
-55°C~150°C TJ
Drain to Source Breakdown Voltage :
1kV
Rise Time :
37ns
Terminal Finish :
Matte Tin (Sn)
Maximum Operating Temperature :
+ 150 C
Number of Terminals :
2
Drain to Source Voltage (Vdss) :
1000V
Terminal Form :
Gull wing
Current - Continuous Drain (Id) @ 25°C :
800mA Tc
Package Shape :
RECTANGULAR
Mounting Style :
SMD/SMT
FET Type :
N-Channel
Series :
Polar™
Surface Mount :
yes
JESD-30 Code :
R-PSSO-G2
Max Operating Temperature :
150 °C
Rds On Max :
20 Ω
Power Dissipation :
42W
Mounting Type :
Surface Mount
Gate to Source Voltage (Vgs) :
20V
Max Power Dissipation :
42 W
Drain Current-Max (Abs) (ID) :
0.8A
FET Feature :
--
Datasheets
IXTY08N100P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTY08N100P from Xinshop,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Terminations:2, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, IXTY08N100P pinout, IXTY08N100P datasheet PDF, IXTY08N100P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTY08N100P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTY08N100P


N-Channel Tube 20 Ω @ 500mA, 10V ±20V 240pF @ 25V 11.3nC @ 10V 1000V TO-252-3, DPak (2 Leads + Tab), SC-63

IXTY08N100P Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 80 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 240pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 800mA amps.In this device, the drain-source breakdown voltage is 1kV and VGS=1kV, so the drain-source breakdown voltage is 1kV in this case.A device can conduct a maximum continuous current of [0.8A] according to its drain current.It is [35 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 1.8 A.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 20 Ω.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 1000 V to maintain normal operation.To operate this transistor, you will need a 1000V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXTY08N100P Features


the avalanche energy rating (Eas) is 80 mJ
a continuous drain current (ID) of 800mA
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 35 ns
based on its rated peak drain current 1.8 A.
single MOSFETs transistor is 20 Ω
a 1000V drain to source voltage (Vdss)


IXTY08N100P Applications


There are a lot of IXYS
IXTY08N100P applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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