IXTY08N100P
- Mfr.Part #
- IXTY08N100P
- Manufacturer
- Littelfuse
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 800MA TO252
- Stock
- 6,705
- In Stock :
- 6,705
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Product Category :
- MOSFET
- Number of Elements :
- 1
- Minimum Operating Temperature :
- - 55 C
- Number of Channels :
- 1 Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 11.3nC @ 10V
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- N-Channel
- RoHS :
- Details
- Min Operating Temperature :
- -55 °C
- Pulsed Drain Current-Max (IDM) :
- 1.8 A
- JEDEC-95 Code :
- TO-252
- Supplier Device Package :
- TO-252, (D-Pak)
- Avalanche Energy Rating (Eas) :
- 80 mJ
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Element Configuration :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 800mA
- Power Dissipation-Max :
- 42W Tc
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 4V @ 50μA
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Transistor Polarity :
- N-Channel
- Manufacturer :
- IXYS
- Factory Lead Time :
- 24 Weeks
- Product Status :
- Active
- Pbfree Code :
- yes
- Drain-source On Resistance-Max :
- 20 Ω
- Fall Time (Typ) :
- 34 ns
- JESD-609 Code :
- e3
- Qualification Status :
- Not Qualified
- Length :
- 6.73 mm
- Transistor Type :
- 1 N-Channel
- Width :
- 6.22 mm
- Pin Count :
- 4
- Power Dissipation-Max (Abs) :
- 42 W
- Configuration :
- Single
- Input Capacitance :
- 240 pF
- Transistor Element Material :
- SILICON
- Additional Feature :
- AVALANCHE RATED
- Packaging :
- Tube
- ECCN Code :
- EAR99
- DS Breakdown Voltage-Min :
- 1000 V
- Vgs (Max) :
- ±20V
- Case Connection :
- DRAIN
- Drain to Source Resistance :
- 20 Ω
- Channel Mode :
- Enhancement
- Product Type :
- MOSFET
- Number of Terminations :
- 2
- Power Dissipation (Max) :
- 42W (Tc)
- Rds On (Max) @ Id, Vgs :
- 20 Ω @ 500mA, 10V
- Terminal Position :
- Single
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn-Off Delay Time :
- 35 ns
- Published :
- 2009
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Base Product Number :
- IXTY08
- Reach Compliance Code :
- Compliant
- Brand :
- IXYS
- Height :
- 2.38 mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 240pF @ 25V
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Breakdown Voltage :
- 1kV
- Rise Time :
- 37ns
- Terminal Finish :
- Matte Tin (Sn)
- Maximum Operating Temperature :
- + 150 C
- Number of Terminals :
- 2
- Drain to Source Voltage (Vdss) :
- 1000V
- Terminal Form :
- Gull wing
- Current - Continuous Drain (Id) @ 25°C :
- 800mA Tc
- Package Shape :
- RECTANGULAR
- Mounting Style :
- SMD/SMT
- FET Type :
- N-Channel
- Series :
- Polar™
- Surface Mount :
- yes
- JESD-30 Code :
- R-PSSO-G2
- Max Operating Temperature :
- 150 °C
- Rds On Max :
- 20 Ω
- Power Dissipation :
- 42W
- Mounting Type :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 20V
- Max Power Dissipation :
- 42 W
- Drain Current-Max (Abs) (ID) :
- 0.8A
- FET Feature :
- --
- Datasheets
- IXTY08N100P

N-Channel Tube 20 Ω @ 500mA, 10V ±20V 240pF @ 25V 11.3nC @ 10V 1000V TO-252-3, DPak (2 Leads + Tab), SC-63
IXTY08N100P Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 80 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 240pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 800mA amps.In this device, the drain-source breakdown voltage is 1kV and VGS=1kV, so the drain-source breakdown voltage is 1kV in this case.A device can conduct a maximum continuous current of [0.8A] according to its drain current.It is [35 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 1.8 A.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 20 Ω.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 1000 V to maintain normal operation.To operate this transistor, you will need a 1000V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTY08N100P Features
the avalanche energy rating (Eas) is 80 mJ
a continuous drain current (ID) of 800mA
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 35 ns
based on its rated peak drain current 1.8 A.
single MOSFETs transistor is 20 Ω
a 1000V drain to source voltage (Vdss)
IXTY08N100P Applications
There are a lot of IXYS
IXTY08N100P applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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