MJ15015
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- Mfr.Part #
- MJ15015
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN 120V 15A TO3
- Stock
- 138
- In Stock ：
- 138
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 180W
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- PNP
- Case Connection :
- COLLECTOR
- Transistor Application :
- SWITCHING
- Contact Plating :
- Tin
- Radiation Hardening :
- No
- Operating Temperature :
- -65°C~200°C TJ
- Element Configuration :
- Single
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 120V
- Current - Collector Cutoff (Max) :
- 100μA
- Current Rating :
- 15A
- Gain Bandwidth Product :
- 6MHz
- Frequency :
- 6MHz
- Max Power Dissipation :
- 180W
- Transistor Type :
- NPN
- Collector Emitter Saturation Voltage :
- 1.1V
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 12 Weeks
- Height :
- 8.51mm
- Collector Emitter Voltage (VCEO) :
- 120V
- Number of Pins :
- 2
- Pin Count :
- 2
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Terminal Position :
- BOTTOM
- Length :
- 39.37mm
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 200V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 4A 2V
- Weight :
- 4.535924g
- hFE Min :
- 10
- Packaging :
- Tray
- Max Collector Current :
- 15A
- Lead Free :
- Lead Free
- Surface Mount :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 5V @ 7A, 15A
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 2
- Terminal Form :
- PIN/PEG
- Emitter Base Voltage (VEBO) :
- 7V
- Transition Frequency :
- 0.8MHz
- Published :
- 2006
- Voltage - Rated DC :
- 120V
- Pbfree Code :
- yes
- Width :
- 26.67mm
- Package / Case :
- TO-204AA, TO-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Datasheets
- MJ15015
NPN -65°C~200°C TJ 100μA 1 Elements 2 Terminations SILICON PNP TO-204AA, TO-3 Tray Through Hole
MJ15015G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10 @ 4A 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 5V @ 7A, 15A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Its current rating is 15A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 0.8MHz.During maximum operation, collector current can be as low as 15A volts.
MJ15015G Features
the DC current gain for this device is 10 @ 4A 2V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 5V @ 7A, 15A
the emitter base voltage is kept at 7V
the current rating of this device is 15A
a transition frequency of 0.8MHz
MJ15015G Applications
There are a lot of ON Semiconductor
MJ15015G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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