MT47H128M16RT-25E:C
- Mfr.Part #
- MT47H128M16RT-25E:C
- Manufacturer
- Micron Technology
- Package / Case
- 84-TFBGA
- Datasheet
- Download
- Description
- IC DRAM 2GBIT PARALLEL 84FBGA
- Stock
- 4,950
- In Stock :
- 4,950
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Standby Current-Max :
- 0.012A
- Clock Frequency :
- 400MHz
- Supply Voltage-Min (Vsup) :
- 1.7V
- Memory Format :
- DRAM
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Ambient Temperature Range High :
- 85°C
- Pbfree Code :
- yes
- Package / Case :
- 84-TFBGA
- Base Part Number :
- MT47H128M16
- Memory Width :
- 16
- Time@Peak Reflow Temperature-Max (s) :
- 30
- REACH SVHC :
- No SVHC
- Contact Plating :
- Copper, Silver, Tin
- Mount :
- Surface Mount
- Refresh Cycles :
- 8192
- Factory Lead Time :
- 4 Weeks
- HTS Code :
- 8542.32.00.36
- Number of Functions :
- 1
- Write Cycle Time - Word, Page :
- 15ns
- Operating Temperature :
- 0°C~85°C TC
- Interleaved Burst Length :
- 48
- Supply Voltage-Max (Vsup) :
- 1.9V
- Density :
- 2 GB
- Pin Count :
- 84
- Terminal Finish :
- Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
- Additional Feature :
- AUTO/SELF REFRESH
- Terminal Pitch :
- 0.8mm
- Supply Voltage :
- 1.8V
- Number of Pins :
- 84
- Number of Ports :
- 1
- JESD-609 Code :
- e1
- Memory Interface :
- Parallel
- Mounting Type :
- Surface Mount
- Output Characteristics :
- 3-STATE
- Published :
- 2011
- Access Time :
- 400ps
- Voltage - Supply :
- 1.7V~1.9V
- Data Bus Width :
- 16b
- Radiation Hardening :
- No
- Memory Size :
- 2Gb 128M x 16
- I/O Type :
- COMMON
- Terminal Position :
- BOTTOM
- Height :
- 1.45mm
- Sequential Burst Length :
- 48
- Memory Type :
- Volatile
- Peak Reflow Temperature (Cel) :
- 260
- Nominal Supply Current :
- 190mA
- Number of Terminations :
- 84
- ECCN Code :
- EAR99
- Organization :
- 128MX16
- Packaging :
- Tray
- RoHS Status :
- ROHS3 Compliant
- Length :
- 12.5mm
- Lead Free :
- Lead Free
- Address Bus Width :
- 17b
- Operating Supply Voltage :
- 1.8V
- Datasheets
- MT47H128M16RT-25E:C

Memory Micron Technology MT47H128M16RT-25E:C Overview
The Memory Micron Technology MT47H128M16RT-25E:C is a high-performance 2Gbit DRAM integrated circuit designed by Micron Technology, encapsulated in an 84FBGA package. This memory module provides robust parallel processing capabilities, making it an ideal solution for applications requiring high-speed data transfer and significant storage capacity. Its advanced design ensures reliability and high-level performance, meeting the rigorous demands of modern technology systems.
MT47H128M16RT-25E:C Features
The MT47H128M16RT-25E:C boasts a range of features that enhance its efficiency and suitability for complex applications. These include a large 2Gbit storage capacity, high data transfer speeds, and low latency. The module's compact 84FBGA packaging allows for efficient space utilization on printed circuit boards, facilitating better heat dissipation and improved signal integrity. Furthermore, it is designed for low-power consumption, which makes it an environmentally friendly choice.
MT47H128M16RT-25E:C Applications
- Computing Systems: Utilized in desktops, laptops, and servers where large amounts of data processing and temporary data storage are required for efficient operation.
- Consumer Electronics: Implemented in devices such as digital cameras and gaming consoles to enhance performance by providing rapid access to data.
- Telecommunication Equipment: Applied in networking hardware like routers and switches, supporting the high-speed data exchange and buffering required in telecommunication infrastructures.
- Automotive Systems: Used in advanced driver-assistance systems (ADAS) and infotainment systems, where quick data processing is critical for safety and user experience.
- Industrial Applications: Integral in automation systems and industrial PCs that require robust memory solutions for complex processing and control tasks.
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