NDS331N
- Mfr.Part #
- NDS331N
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 1.3A SUPERSOT3
- Stock
- 37,242
- In Stock :
- 37,242
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current Rating :
- 1.3A
- Length :
- 2.92mm
- Resistance :
- 160mOhm
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.7V 4.5V
- Max Junction Temperature (Tj) :
- 150°C
- Terminal Finish :
- Tin (Sn)
- Fall Time (Typ) :
- 5 ns
- Width :
- 1.4mm
- Power Dissipation-Max :
- 500mW Ta
- Mounting Type :
- Surface Mount
- Number of Channels :
- 1
- Factory Lead Time :
- 10 Weeks
- Published :
- 1998
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Continuous Drain Current (ID) :
- 1.3A
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Element Configuration :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Drain to Source Breakdown Voltage :
- 20V
- Mount :
- Surface Mount
- Turn On Delay Time :
- 5 ns
- Threshold Voltage :
- 700mV
- Voltage - Rated DC :
- 20V
- JESD-609 Code :
- e3
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 162pF @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 1.3A Ta
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 8V
- Turn-Off Delay Time :
- 10 ns
- Vgs (Max) :
- ±8V
- Terminal Form :
- Gull wing
- Rise Time :
- 25ns
- Height :
- 1.22mm
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- Weight :
- 30mg
- Power Dissipation :
- 500mW
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Rds On (Max) @ Id, Vgs :
- 160m Ω @ 1.5A, 4.5V
- Number of Pins :
- 3
- Nominal Vgs :
- 700 mV
- Gate Charge (Qg) (Max) @ Vgs :
- 5nC @ 4.5V
- Pbfree Code :
- yes
- Datasheets
- NDS331N

N-Channel Tape & Reel (TR) 160m Ω @ 1.5A, 4.5V ±8V 162pF @ 10V 5nC @ 4.5V TO-236-3, SC-59, SOT-23-3
NDS331N Description
The NDS331N is a high-cell density, DMOS N-channel logic level enhancement mode Field-Effect Transistor. This ultra-high-density method was specifically designed to reduce on-state resistance. The NDS331N transistor is designed for low-voltage applications such as PCMCIA cards and other battery-powered circuits that require fast switching and low in-line power loss in a tiny shape surface mount package.
NDS331N Features
-
1.3 A, 20 V. RDS(ON) = 0.21 W @ VGS= 2.7 V
-
RDS(ON) = 0.16 W @ VGS= 4.5 V.
-
Industry-standard outline SOT-23 surface-mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities.
-
High-density cell design for extremely low RDS(ON).
-
Exceptional on-resistance and maximum DC current capability.
NDS331N Applications
-
Power Management
-
Computers & Computer Peripherals
-
Notebook computers
-
Portable phones
-
PCMCIA cards
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