NDS352AP

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-236-3, SC-59, SOT-23-3

RoHS Status :

ROHS3 Compliant

FET Type :

P-Channel

Rds On (Max) @ Id, Vgs :

300m Ω @ 1A, 10V

Drain Current-Max (Abs) (ID) :

0.9A

Number of Elements :

1

Weight :

30mg

Packaging :

Cut Tape (CT)

Gate Charge (Qg) (Max) @ Vgs :

3nC @ 4.5V

Mount :

Surface Mount

Terminal Position :

Dual

Current Rating :

-900mA

Number of Pins :

3

Nominal Vgs :

-1.7 V

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

900mA

Voltage - Rated DC :

-30V

Resistance :

500MOhm

Vgs (Max) :

±20V

Turn On Delay Time :

8 ns

Height :

1.22mm

Drain to Source Voltage (Vdss) :

30V

Radiation Hardening :

No

Contact Plating :

Tin

Threshold Voltage :

-800mV

Element Configuration :

Single

Fall Time (Typ) :

16 ns

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

135pF @ 15V

Dual Supply Voltage :

-30V

Power Dissipation :

500mW

Transistor Application :

SWITCHING

Max Junction Temperature (Tj) :

150°C

Published :

1997

Number of Channels :

1

Drain to Source Breakdown Voltage :

-30V

Factory Lead Time :

10 Weeks

Terminal Form :

Gull wing

JESD-609 Code :

e3

Turn-Off Delay Time :

35 ns

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

900mA Ta

Width :

3.05mm

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Transistor Element Material :

SILICON

Rise Time :

16ns

ECCN Code :

EAR99

Additional Feature :

LOGIC LEVEL COMPATIBLE

REACH SVHC :

No SVHC

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Power Dissipation-Max :

500mW Ta

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mounting Type :

Surface Mount

Pbfree Code :

yes