NZT560A

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Mount :

Surface Mount

Collector Emitter Breakdown Voltage :

60V

Collector Emitter Saturation Voltage :

400mV

Height :

1.6mm

Weight :

188mg

Element Configuration :

Single

Number of Elements :

1

hFE Min :

250

Mounting Type :

Surface Mount

Voltage - Rated DC :

60V

Current - Collector Cutoff (Max) :

100nA ICBO

Package / Case :

TO-261-4, TO-261AA

JESD-30 Code :

R-PDSO-G4

Width :

3.5mm

Collector Base Voltage (VCBO) :

80V

REACH SVHC :

No SVHC

Gain Bandwidth Product :

75MHz

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Length :

6.5mm

Collector Emitter Voltage (VCEO) :

60V

Terminal Position :

Dual

Max Power Dissipation :

1W

Radiation Hardening :

No

Max Collector Current :

3A

Factory Lead Time :

14 Weeks

Current Rating :

3A

Transition Frequency :

75MHz

Transistor Type :

NPN

Power Dissipation :

1W

Polarity/Channel Type :

NPN

Emitter Base Voltage (VEBO) :

5V

Case Connection :

COLLECTOR

Frequency :

75MHz

Base Part Number :

NZT560

Vce Saturation (Max) @ Ib, Ic :

400mV @ 300mA, 3A

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Number of Terminations :

4

Number of Pins :

3

Pbfree Code :

yes

Max Breakdown Voltage :

60V

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

250 @ 500mA 2V

Lead Free :

Lead Free

Terminal Form :

Gull wing

Published :

2017