RTL030P02TR
- Mfr.Part #
- RTL030P02TR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 6-SMD, Flat Leads
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 3A TUMT6
- Stock
- 16,731
- In Stock :
- 16,731
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 70m Ω @ 3A, 4.5V
- Package / Case :
- 6-SMD, Flat Leads
- Input Capacitance (Ciss) (Max) @ Vds :
- 760pF @ 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- FET Type :
- P-Channel
- Fall Time (Typ) :
- 22 ns
- Power Dissipation :
- 1W
- Pin Count :
- 6
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Current - Continuous Drain (Id) @ 25°C :
- 3A Ta
- Turn-Off Delay Time :
- 50 ns
- JESD-609 Code :
- e2
- Drain Current-Max (Abs) (ID) :
- 3A
- Gate Charge (Qg) (Max) @ Vgs :
- 8nC @ 4.5V
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- JESD-30 Code :
- R-PDSO-F6
- Transistor Application :
- SWITCHING
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- TIN COPPER
- Pbfree Code :
- yes
- Terminal Position :
- Dual
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Number of Pins :
- 3
- Current Rating :
- -3A
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- Published :
- 2004
- Number of Terminations :
- 6
- Power Dissipation-Max :
- 1W Ta
- Turn On Delay Time :
- 12 ns
- Voltage - Rated DC :
- -20V
- Vgs (Max) :
- ±12V
- Gate to Source Voltage (Vgs) :
- 12V
- Drain to Source Breakdown Voltage :
- -20V
- Continuous Drain Current (ID) :
- 3A
- Rise Time :
- 25ns
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Operating Mode :
- ENHANCEMENT MODE
- Lead Free :
- Lead Free
- Resistance :
- 70mOhm
- Drain to Source Voltage (Vdss) :
- 20V
- Packaging :
- Tape and Reel (TR)
- Datasheets
- RTL030P02TR

P-Channel Tape & Reel (TR) 70m Ω @ 3A, 4.5V ±12V 760pF @ 10V 8nC @ 4.5V 20V 6-SMD, Flat Leads
RTL030P02TR Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 760pF @ 10V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 3A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -20V, and this device has a drainage-to-source breakdown voltage of -20VV.Drain current refers to the maximum continuous current a device can conduct, and it is 3A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 50 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 12 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 12V to 1.For this transistor to work, a voltage 20V is required between drain and source (Vdss).Using drive voltage (2.5V 4.5V), this device contributes to a reduction in overall power consumption.
RTL030P02TR Features
a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 50 ns
a 20V drain to source voltage (Vdss)
RTL030P02TR Applications
There are a lot of ROHM Semiconductor
RTL030P02TR applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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