RTL035N03TR
- Mfr.Part #
- RTL035N03TR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 6-SMD, Flat Leads
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 3.5A TUMT6
- Stock
- 9,421
- In Stock :
- 9,421
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Height :
- 770μm
- REACH SVHC :
- No SVHC
- Vgs(th) (Max) @ Id :
- 1.5V @ 1mA
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Threshold Voltage :
- 1.5V
- Gate Charge (Qg) (Max) @ Vgs :
- 6.4nC @ 4.5V
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e2
- Terminal Finish :
- Tin/Copper (Sn/Cu)
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Drain to Source Breakdown Voltage :
- 30V
- Power Dissipation-Max :
- 1W Ta
- Rds On (Max) @ Id, Vgs :
- 56m Ω @ 3.5A, 4.5V
- Terminal Position :
- Dual
- Number of Terminations :
- 6
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- Width :
- 1.7mm
- Pin Count :
- 6
- Current - Continuous Drain (Id) @ 25°C :
- 3.5A Ta
- Gate to Source Voltage (Vgs) :
- 12V
- Length :
- 2mm
- Mount :
- Surface Mount
- Package / Case :
- 6-SMD, Flat Leads
- Turn-Off Delay Time :
- 32 ns
- Factory Lead Time :
- 20 Weeks
- Voltage - Rated DC :
- 30V
- Continuous Drain Current (ID) :
- 3.5A
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- Turn On Delay Time :
- 9 ns
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Resistance :
- 79mOhm
- Transistor Application :
- SWITCHING
- Current Rating :
- 3.5A
- Power Dissipation :
- 1W
- Rise Time :
- 25ns
- Fall Time (Typ) :
- 20 ns
- Operating Temperature :
- 150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Number of Pins :
- 6
- Published :
- 2001
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 350pF @ 10V
- Packaging :
- Tape and Reel (TR)
- Datasheets
- RTL035N03TR

N-Channel Tape & Reel (TR) 56m Ω @ 3.5A, 4.5V 350pF @ 10V 6.4nC @ 4.5V 6-SMD, Flat Leads
RTL035N03TR Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 350pF @ 10V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 3.5A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=30V. And this device has 30V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 32 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 9 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 12V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 1.5V threshold voltage. By using drive voltage (2.5V 4.5V), this device helps reduce its overall power consumption.
RTL035N03TR Features
a continuous drain current (ID) of 3.5A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 32 ns
a threshold voltage of 1.5V
RTL035N03TR Applications
There are a lot of ROHM Semiconductor
RTL035N03TR applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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