VP3203N3-G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

14 Weeks

FET Type :

P-Channel

Vgs(th) (Max) @ Id :

3.5V @ 10mA

Number of Terminals :

3

Number of Channels :

1

Maximum Operating Temperature :

+ 150 C

Transistor Polarity :

P-Channel

Drain Current-Max (Abs) (ID) :

0.65A

Mounting :

Through Hole

Packaging :

Bulk

Package Type :

TO-92

Power Dissipation-Max (Abs) :

0.74 W

Weight :

453.59237mg

Drain-source On Resistance-Max :

0.6Ohm

Transistor Type :

1 P-Channel

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

300pF @ 25V

Rise Time :

15ns

Additional Feature :

HIGH INPUT IMPEDANCE

Turn On Delay Time :

10 ns

Power Dissipation Ambient-Max :

0.74 W

Turn-Off Delay Time :

25 ns

Feedback Cap-Max (Crss) :

60 pF

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code :

e3

Number of Pins :

3

Polarity :

P

Manufacturer :

Microchip

Height :

5.33mm

Rad Hardened :

No

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Operating Temp Range :

-55C to 150C

ECCN Code :

EAR99

Product Status :

Active

HTS Code :

8541.21.00.95

Continuous Drain Current :

0.65(A)

Qualification Status :

Not Qualified

Polarity/Channel Type :

P-Channel

Mount :

Through Hole

Number of Elements :

1

DS Breakdown Voltage-Min :

30 V

Product :

MOSFET Small Signal

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

15 ns

Power Dissipation-Max :

740mW Ta

Vgs (Max) :

±20V

Surface Mount :

No

Operating Temperature Classification :

Military

JEDEC-95 Code :

TO-92

Mounting Style :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

Matte Tin (Sn) - annealed

Channel Type :

P

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

30V

Package :

Bag

Series :

--

Reach Compliance Code :

Compliant

Product Type :

MOSFET

Supplier Device Package :

TO-92-3

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

650mA Tj

FET Feature :

--

Channel Mode :

Enhancement

Qualification :

-

Terminal Form :

THROUGH-HOLE

Power Dissipation (Max) :

740mW (Ta)

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

650mA

Number of Terminations :

3

Product Category :

MOSFET

Transistor Application :

SWITCHING

Power Dissipation :

740mW

Package Shape :

Round

RoHS :

Details

Length :

5.21mm

Rds On (Max) @ Id, Vgs :

600m Ω @ 3A, 10V

Brand :

Microchip Technology / Atmel

Terminal Position :

BOTTOM

Pin Count :

3

Minimum Operating Temperature :

- 55 C

JESD-30 Code :

O-PBCY-T3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Base Product Number :

VP3203

Gate-Source Voltage (Max) :

±20(V)

Continuous Drain Current Id :

650

Configuration :

Single

Published :

2013

Width :

4.19mm

Type :

Power MOSFET

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

Not Applicable

MSL :

-

Drain to Source Breakdown Voltage :

-30V

Drain-Source On-Volt :

30(V)