VP3203N8-G

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Mfr.Part #
VP3203N8-G
Manufacturer
Microchip Technology
Package / Case
TO-243AA
Datasheet
Download
Description
MOSFET P-CH 30V 1.1A TO243AA
Stock
2,482
In Stock :
2,482

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Lead Free :
Lead Free
Transistor Type :
1 P-Channel
Drain-source On Resistance-Max :
0.6Ohm
Terminal Position :
Single
Mount :
Surface Mount
Number of Terminations :
3
Number of Elements :
1
JESD-30 Code :
R-PSSO-F3
Channel Type :
P
Transistor Element Material :
SILICON
Drain-Source On-Volt :
30(V)
ECCN Code :
EAR99
Base Product Number :
VP3203
Product Category :
MOSFET
Factory Lead Time :
1 Weeks
Peak Reflow Temperature (Cel) :
260
Number of Terminals :
3
Pulsed Drain Current-Max (IDM) :
4A
Width :
2.6mm
Mounting Type :
Surface Mount
Additional Feature :
FAST SWITCHING
Radiation Hardening :
No
Configuration :
Single
Turn-Off Delay Time :
25 ns
Product Status :
Active
Qualification Status :
Not Qualified
Number of Channels :
1
Operating Temperature Classification :
Military
Transistor Polarity :
P-Channel
Polarity/Channel Type :
P-Channel
Published :
2013
Height :
1.6mm
Power Dissipation :
1.6W
Rise Time :
15ns
Gate to Source Voltage (Vgs) :
20V
Surface Mount :
yes
Mounting Style :
SMD/SMT
Power Dissipation-Max (Abs) :
1.6 W
Vgs (Max) :
±20V
Weight :
52.786812mg
Transistor Application :
SWITCHING
Drain to Source Voltage (Vdss) :
30V
JEDEC-95 Code :
TO-243AA
HTS Code :
8541.29.00.95
Power Dissipation-Max :
1.6W Ta
RoHS :
Details
Package Shape :
RECTANGULAR
Operating Mode :
ENHANCEMENT MODE
Reach Compliance Code :
Compliant
RoHS Status :
ROHS3 Compliant
Package / Case :
TO-243AA
Element Configuration :
Single
Operating Temperature :
-55°C~150°C TJ
Type :
Power MOSFET
Power Dissipation (Max) :
1.6W (Ta)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Finish :
Matte Tin (Sn) - annealed
Case Connection :
DRAIN
Length :
4.6mm
Rad Hardened :
No
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Current - Continuous Drain (Id) @ 25°C :
1.1A Tj
Continuous Drain Current :
1.1(A)
Product Type :
MOSFET
Series :
--
Manufacturer :
Microchip
Gate-Source Voltage (Max) :
±20(V)
FET Type :
P-Channel
Pin Count :
3 +Tab
Packaging :
Tape and Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds :
300pF @ 25V
Package Type :
SOT-89
Channel Mode :
Enhancement
DS Breakdown Voltage-Min :
30 V
Turn On Delay Time :
10 ns
Time@Peak Reflow Temperature-Max (s) :
40
Continuous Drain Current Id :
1.1
Drain to Source Breakdown Voltage :
-30V
Operating Temp Range :
-55C to 150C
Supplier Device Package :
TO-243AA (SOT-89)
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Product :
MOSFET Small Signal
Minimum Operating Temperature :
- 55 C
FET Feature :
--
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Rds On (Max) @ Id, Vgs :
600m Ω @ 1.5A, 10V
Continuous Drain Current (ID) :
1.1A
Terminal Form :
Flat
Fall Time (Typ) :
15 ns
Maximum Operating Temperature :
+ 150 C
JESD-609 Code :
e3
Mounting :
Surface Mount
Vgs(th) (Max) @ Id :
3.5V @ 10mA
Polarity :
P
Brand :
Microchip Technology / Atmel
Datasheets
VP3203N8-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology VP3203N8-G from Xinshop,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Surface Mount, Number of Channels:1, Package / Case:TO-243AA, Operating Temperature:-55°C~150°C TJ, Type:Power MOSFET, VP3203N8-G pinout, VP3203N8-G datasheet PDF, VP3203N8-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology VP3203N8-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology VP3203N8-G


P-Channel Tape & Reel (TR) 600m Ω @ 1.5A, 10V ±20V 300pF @ 25V 30V TO-243AA

VP3203N8-G Overview


The maximum input capacitance of this device is 300pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 1.1A.When VGS=-30V, and ID flows to VDS at -30VVDS, the drain-source breakdown voltage is -30V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 25 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 4A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 10 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 30 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

VP3203N8-G Features


a continuous drain current (ID) of 1.1A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 25 ns
based on its rated peak drain current 4A.
a 30V drain to source voltage (Vdss)


VP3203N8-G Applications


There are a lot of Microchip Technology
VP3203N8-G applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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