VP3203N8-G
- Mfr.Part #
- VP3203N8-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 1.1A TO243AA
- Stock
- 2,482
- In Stock :
- 2,482
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Lead Free
- Transistor Type :
- 1 P-Channel
- Drain-source On Resistance-Max :
- 0.6Ohm
- Terminal Position :
- Single
- Mount :
- Surface Mount
- Number of Terminations :
- 3
- Number of Elements :
- 1
- JESD-30 Code :
- R-PSSO-F3
- Channel Type :
- P
- Transistor Element Material :
- SILICON
- Drain-Source On-Volt :
- 30(V)
- ECCN Code :
- EAR99
- Base Product Number :
- VP3203
- Product Category :
- MOSFET
- Factory Lead Time :
- 1 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminals :
- 3
- Pulsed Drain Current-Max (IDM) :
- 4A
- Width :
- 2.6mm
- Mounting Type :
- Surface Mount
- Additional Feature :
- FAST SWITCHING
- Radiation Hardening :
- No
- Configuration :
- Single
- Turn-Off Delay Time :
- 25 ns
- Product Status :
- Active
- Qualification Status :
- Not Qualified
- Number of Channels :
- 1
- Operating Temperature Classification :
- Military
- Transistor Polarity :
- P-Channel
- Polarity/Channel Type :
- P-Channel
- Published :
- 2013
- Height :
- 1.6mm
- Power Dissipation :
- 1.6W
- Rise Time :
- 15ns
- Gate to Source Voltage (Vgs) :
- 20V
- Surface Mount :
- yes
- Mounting Style :
- SMD/SMT
- Power Dissipation-Max (Abs) :
- 1.6 W
- Vgs (Max) :
- ±20V
- Weight :
- 52.786812mg
- Transistor Application :
- SWITCHING
- Drain to Source Voltage (Vdss) :
- 30V
- JEDEC-95 Code :
- TO-243AA
- HTS Code :
- 8541.29.00.95
- Power Dissipation-Max :
- 1.6W Ta
- RoHS :
- Details
- Package Shape :
- RECTANGULAR
- Operating Mode :
- ENHANCEMENT MODE
- Reach Compliance Code :
- Compliant
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-243AA
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Type :
- Power MOSFET
- Power Dissipation (Max) :
- 1.6W (Ta)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Case Connection :
- DRAIN
- Length :
- 4.6mm
- Rad Hardened :
- No
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Current - Continuous Drain (Id) @ 25°C :
- 1.1A Tj
- Continuous Drain Current :
- 1.1(A)
- Product Type :
- MOSFET
- Series :
- --
- Manufacturer :
- Microchip
- Gate-Source Voltage (Max) :
- ±20(V)
- FET Type :
- P-Channel
- Pin Count :
- 3 +Tab
- Packaging :
- Tape and Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds :
- 300pF @ 25V
- Package Type :
- SOT-89
- Channel Mode :
- Enhancement
- DS Breakdown Voltage-Min :
- 30 V
- Turn On Delay Time :
- 10 ns
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Continuous Drain Current Id :
- 1.1
- Drain to Source Breakdown Voltage :
- -30V
- Operating Temp Range :
- -55C to 150C
- Supplier Device Package :
- TO-243AA (SOT-89)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Product :
- MOSFET Small Signal
- Minimum Operating Temperature :
- - 55 C
- FET Feature :
- --
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Rds On (Max) @ Id, Vgs :
- 600m Ω @ 1.5A, 10V
- Continuous Drain Current (ID) :
- 1.1A
- Terminal Form :
- Flat
- Fall Time (Typ) :
- 15 ns
- Maximum Operating Temperature :
- + 150 C
- JESD-609 Code :
- e3
- Mounting :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 3.5V @ 10mA
- Polarity :
- P
- Brand :
- Microchip Technology / Atmel
- Datasheets
- VP3203N8-G

P-Channel Tape & Reel (TR) 600m Ω @ 1.5A, 10V ±20V 300pF @ 25V 30V TO-243AA
VP3203N8-G Overview
The maximum input capacitance of this device is 300pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 1.1A.When VGS=-30V, and ID flows to VDS at -30VVDS, the drain-source breakdown voltage is -30V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 25 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 4A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 10 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 30 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
VP3203N8-G Features
a continuous drain current (ID) of 1.1A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 25 ns
based on its rated peak drain current 4A.
a 30V drain to source voltage (Vdss)
VP3203N8-G Applications
There are a lot of Microchip Technology
VP3203N8-G applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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