ZTX1051A
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- Mfr.Part #
- ZTX1051A
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 4A E-LINE
- Stock
- 16,278
- In Stock ：
- 16,278
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Number of Pins :
- 3
- Terminal Finish :
- Matte Tin (Sn)
- Voltage - Rated DC :
- 40V
- Pbfree Code :
- No
- Current - Collector Cutoff (Max) :
- 10nA
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Package / Case :
- E-Line-3
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Gain Bandwidth Product :
- 155MHz
- Terminal Form :
- Wire
- Pin Count :
- 3
- Mount :
- Through Hole
- Frequency :
- 155MHz
- Width :
- 2.41mm
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 1W
- Lead Free :
- Lead Free
- Base Part Number :
- ZTX1051A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Power Dissipation :
- 1W
- Weight :
- 453.59237mg
- Operating Temperature :
- -55°C~200°C TJ
- hFE Min :
- 300
- Peak Reflow Temperature (Cel) :
- 260
- Published :
- 2012
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Height :
- 4.01mm
- Max Collector Current :
- 4A
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 150V
- Transistor Application :
- AMPLIFIER
- Transition Frequency :
- 155MHz
- Current Rating :
- 4A
- Continuous Collector Current :
- 4A
- Packaging :
- Bulk
- Collector Emitter Breakdown Voltage :
- 40V
- Length :
- 4.77mm
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 1A 2V
- Emitter Base Voltage (VEBO) :
- 5V
- Factory Lead Time :
- 15 Weeks
- Collector Emitter Voltage (VCEO) :
- 40V
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 210mV @ 100mA, 4A
- Datasheets
- ZTX1051A
NPN -55°C~200°C TJ 10nA 1 Elements 3 Terminations SILICON NPN E-Line-3 Bulk Through Hole
ZTX1051A Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 300 @ 1A 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 210mV @ 100mA, 4A.Single BJT transistor is recommended to keep the continuous collector voltage at 4A in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 4A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 155MHz.Single BJT transistor is possible to have a collector current as low as 4A volts at Single BJT transistors maximum.
ZTX1051A Features
the DC current gain for this device is 300 @ 1A 2V
the vce saturation(Max) is 210mV @ 100mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 155MHz
ZTX1051A Applications
There are a lot of Diodes Incorporated
ZTX1051A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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