2N2369A

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Single

Emitter Base Voltage (VEBO) :

4.5V

Max Power Dissipation :

360mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 100mA 1V

Terminal Form :

Wire

Collector Emitter Breakdown Voltage :

15V

Transistor Element Material :

SILICON

Transistor Type :

NPN

Lead Free :

Contains Lead

Configuration :

Single

Number of Pins :

3

Contact Plating :

Lead, Tin

Radiation Hardening :

No

Collector-Base Capacitance-Max :

4pF

Pbfree Code :

No

ECCN Code :

EAR99

Factory Lead Time :

12 Weeks

Terminal Position :

BOTTOM

Number of Elements :

1

Package / Case :

TO-206AA, TO-18-3 Metal Can

Pin Count :

3

Published :

2002

Terminal Finish :

TIN LEAD

JESD-609 Code :

e0

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

400nA

Vce Saturation (Max) @ Ib, Ic :

450mV @ 10mA, 100mA

RoHS Status :

Non-RoHS Compliant

Case Connection :

COLLECTOR

Collector Emitter Voltage (VCEO) :

15V

Mount :

Through Hole

Transition Frequency :

500MHz

Power Dissipation :

360mW

Number of Terminations :

3

Packaging :

Bulk

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Collector Base Voltage (VCBO) :

40V

Operating Temperature :

-65°C~200°C TJ

Polarity/Channel Type :

NPN

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

VCEsat-Max :

0.45 V