2N2857UB

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Terminal Position :

Dual

Factory Lead Time :

22 Weeks

Polarity/Channel Type :

NPN

Max Collector Current :

40mA

Configuration :

Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 3mA 1V

Published :

2007

Number of Terminations :

3

RoHS Status :

Non-RoHS Compliant

Pbfree Code :

No

ECCN Code :

EAR99

Operating Temperature :

-65°C~200°C TJ

Transistor Element Material :

SILICON

Mount :

Surface Mount

Power Dissipation :

200mW

Transistor Type :

NPN

Noise Figure (dB Typ @ f) :

4.5dB @ 450MHz

Pin Count :

3

Collector Base Voltage (VCBO) :

30V

Mounting Type :

Surface Mount

JESD-609 Code :

e0

Collector Emitter Voltage (VCEO) :

15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

TIN LEAD

Number of Elements :

1

Max Power Dissipation :

200mW

Package / Case :

3-SMD, No Lead

Gain :

21dB

Radiation Hardening :

No

Emitter Base Voltage (VEBO) :

3V

Number of Pins :

3

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Packaging :

Bulk