
2N2879

- Mfr.Part #
- 2N2879
- Manufacturer
- Microchip Technology
- Package / Case
- TO-111-4, Stud
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 22,236





- In Stock :
- 22,236
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Polarity :
- NPN
- Series :
- -
- Subcategory :
- Transistors
- Voltage - Collector Emitter Breakdown (Max) :
- 80 V
- Product Status :
- Active
- Manufacturer :
- Microchip
- Supplier Device Package :
- TO-111
- Current - Collector Cutoff (Max) :
- -
- Package / Case :
- TO-111-4, Stud
- Brand :
- Microchip Technology
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- -
- Frequency - Transition :
- -
- Product Type :
- BJTs - Bipolar Transistors
- Transistor Type :
- NPN
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Mounting Type :
- Stud Mount
- Product Category :
- Bipolar Transistors - BJT
- Current - Collector (Ic) (Max) :
- 5 A
- Package :
- Bulk
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 100μA, 1mA
- Power - Max :
- 30 W
- Technology :
- Si
- Datasheets
- 2N2879
NPN -65°C ~ 200°C (TJ) - TO-111-4, Stud Stud Mount
2N2879 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is -.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 100μA, 1mA.The product comes in the supplier device package of TO-111.A 80 V maximal voltage - Collector Emitter Breakdown is present in the device.
2N2879 Features
the DC current gain for this device is -
the vce saturation(Max) is 250mV @ 100μA, 1mA
the supplier device package of TO-111
2N2879 Applications
There are a lot of Microchip Technology
2N2879 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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