2N2916A

Manufacturer :

Solid State Inc.

Product Category :

Transistors - Bipolar (BJT) - Arrays

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 10μA 5V

Transistor Type :

2 NPN (Dual)

Published :

2017

Configuration :

SEPARATE, 2 ELEMENTS

Packaging :

Bulk

Number of Terminations :

6

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-78-6 Metal Can

RoHS Status :

Non-RoHS Compliant

Number of Elements :

2

JESD-30 Code :

O-MBCY-W6

Terminal Finish :

Tin/Lead (Sn/Pb)

Current - Collector (Ic) (Max) :

30mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

NPN

Power Dissipation-Max (Abs) :

0.3W

Operating Temperature (Max) :

175°C

Additional Feature :

LOW NOISE

Frequency - Transition :

60MHz

Terminal Form :

Wire

ECCN Code :

EAR99

Voltage - Collector Emitter Breakdown (Max) :

45V

Reach Compliance Code :

not_compliant

Transition Frequency :

60MHz

HTS Code :

8541.21.00.95

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

BOTTOM

Qualification Status :

Not Qualified

Pbfree Code :

No

Surface Mount :

No

JESD-609 Code :

e0

Mounting Type :

Through Hole

Power - Max :

600mW