2N3810

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Arrays

Power Dissipation :

350mW

Package / Case :

TO-78-6 Metal Can

Vce Saturation (Max) @ Ib, Ic :

250mV @ 100μA, 1mA

RoHS Status :

Non-RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 1mA 5V

Collector Base Voltage (VCBO) :

60V

Transistor Type :

2 PNP (Dual)

Transistor Application :

AMPLIFIER

Transition Frequency :

100MHz

Current - Collector Cutoff (Max) :

10μA ICBO

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)

Terminal Form :

Wire

Mounting Type :

Through Hole

Collector Emitter Voltage (VCEO) :

60V

JESD-30 Code :

O-MBCY-W8

Operating Temperature :

-65°C~200°C TJ

Terminal Position :

BOTTOM

Pin Count :

8

Mount :

Through Hole

Terminal Finish :

TIN LEAD

Number of Elements :

2

Polarity :

PNP

Collector Emitter Breakdown Voltage :

60V

Number of Pins :

6

Emitter Base Voltage (VEBO) :

5V

Radiation Hardening :

No

ECCN Code :

EAR99

Max Power Dissipation :

350mW

JESD-609 Code :

e0

Max Collector Current :

50mA

Pbfree Code :

No

Factory Lead Time :

12 Weeks

Packaging :

Bulk

Transistor Element Material :

SILICON

Number of Terminations :

8