2N4250A

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Mfr.Part #
2N4250A
Manufacturer
Central Semiconductor
Package / Case
TO-106-3 Domed
Datasheet
Download
Description
TRANS PNP 60V TO126
Stock
25,078
In Stock :
25,078

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Manufacturer :
Central Semiconductor
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Element Material :
SILICON
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-55°C~150°C TJ
JESD-30 Code :
O-PBCY-T3
DC Current Gain (hFE) (Min) @ Ic, Vce :
250 @ 100μA 5V
Power Dissipation-Max (Abs) :
0.2W
Package / Case :
TO-106-3 Domed
Mounting Type :
Through Hole
RoHS Status :
Non-RoHS Compliant
Current - Collector Cutoff (Max) :
10nA ICBO
Transition Frequency :
100MHz
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Qualification Status :
Not Qualified
JESD-609 Code :
e0
Reach Compliance Code :
not_compliant
Pbfree Code :
No
Vce Saturation (Max) @ Ib, Ic :
250mV @ 500µA, 10mA
Polarity/Channel Type :
PNP
Number of Terminations :
3
Power - Max :
200mW
Packaging :
Bulk
Terminal Finish :
Tin/Lead (Sn/Pb)
Transistor Application :
AMPLIFIER
Number of Elements :
1
Transistor Type :
PNP
Configuration :
Single
Surface Mount :
No
Voltage - Collector Emitter Breakdown (Max) :
60V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
HTS Code :
8541.21.00.95
Terminal Position :
BOTTOM
Datasheets
2N4250A
Introducing Transistors - Bipolar (BJT) - Single Central Semiconductor 2N4250A from Xinshop,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-106-3 Domed, Mounting Type:Through Hole, Number of Terminations:3, 2N4250A pinout, 2N4250A datasheet PDF, 2N4250A amp .Beyond Transistors - Bipolar (BJT) - Single Central Semiconductor 2N4250A ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



PNP -55°C~150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON PNP TO-106-3 Domed Bulk Through Hole

2N4250A Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 250 @ 100μA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 500μA, 10mA.Parts of this part have transition frequencies of 100MHz.This device displays a 60V maximum voltage - Collector Emitter Breakdown.

2N4250A Features


the DC current gain for this device is 250 @ 100μA 5V
the vce saturation(Max) is 250mV @ 500μA, 10mA
a transition frequency of 100MHz


2N4250A Applications


There are a lot of Central Semiconductor Corp
2N4250A applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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