2N4250A
- Mfr.Part #
- 2N4250A
- Manufacturer
- Central Semiconductor
- Package / Case
- TO-106-3 Domed
- Datasheet
- Download
- Description
- TRANS PNP 60V TO126
- Stock
- 25,078
- In Stock :
- 25,078
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- Manufacturer :
- Central Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- JESD-30 Code :
- O-PBCY-T3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100μA 5V
- Power Dissipation-Max (Abs) :
- 0.2W
- Package / Case :
- TO-106-3 Domed
- Mounting Type :
- Through Hole
- RoHS Status :
- Non-RoHS Compliant
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Transition Frequency :
- 100MHz
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- JESD-609 Code :
- e0
- Reach Compliance Code :
- not_compliant
- Pbfree Code :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 500µA, 10mA
- Polarity/Channel Type :
- PNP
- Number of Terminations :
- 3
- Power - Max :
- 200mW
- Packaging :
- Bulk
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Transistor Application :
- AMPLIFIER
- Number of Elements :
- 1
- Transistor Type :
- PNP
- Configuration :
- Single
- Surface Mount :
- No
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- HTS Code :
- 8541.21.00.95
- Terminal Position :
- BOTTOM
- Datasheets
- 2N4250A
PNP -55°C~150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON PNP TO-106-3 Domed Bulk Through Hole
2N4250A Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 250 @ 100μA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 500μA, 10mA.Parts of this part have transition frequencies of 100MHz.This device displays a 60V maximum voltage - Collector Emitter Breakdown.
2N4250A Features
the DC current gain for this device is 250 @ 100μA 5V
the vce saturation(Max) is 250mV @ 500μA, 10mA
a transition frequency of 100MHz
2N4250A Applications
There are a lot of Central Semiconductor Corp
2N4250A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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