2N4912

- Mfr.Part #
- 2N4912
- Manufacturer
- Microchip Technology
- Package / Case
- TO-213AA, TO-66-2
- Datasheet
- Download
- Description
- TRANS PNP 80V 4A TO66
- Stock
- 20,397





- In Stock :
- 20,397
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Series :
- -
- Supplier Device Package :
- TO-66 (TO-213AA)
- Mounting Type :
- Through Hole
- Manufacturer :
- NTE Electronics
- Transistor Type :
- PNP
- Current - Collector (Ic) (Max) :
- 4 A
- Frequency - Transition :
- -
- Operating Temperature :
- -
- Voltage - Collector Emitter Breakdown (Max) :
- 80 V
- Current - Collector Cutoff (Max) :
- -
- Package / Case :
- TO-213AA, TO-66-2
- Product Status :
- Active
- Power - Max :
- 25 W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- -
- Package :
- Bag
- Vce Saturation (Max) @ Ib, Ic :
- -
- Datasheets
- 2N4912

PNP - - TO-213AA, TO-66-2 Through Hole
2N4912 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is -.When VCE saturation is -, transistor means Ic has reached transistors maximum value (saturated).Supplier package TO-66 (TO-213AA) contains the product.The device has a 80 V maximal voltage - Collector Emitter Breakdown.
2N4912 Features
the DC current gain for this device is -
the vce saturation(Max) is -
the supplier device package of TO-66 (TO-213AA)
2N4912 Applications
There are a lot of NTE Electronics, Inc
2N4912 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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