2N5075

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Single

Power - Max :

40 W

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Terminal Position :

UPPER

Transistor Polarity :

NPN

Transistor Type :

NPN

DC Current Gain-Min (hFE) :

90

Number of Elements :

1

Package Shape :

Round

Voltage - Collector Emitter Breakdown (Max) :

200 V

Subcategory :

Transistors

Number of Terminals :

3

Supplier Device Package :

TO-59

VCEsat-Max :

2 V

Mounting Type :

Stud Mount

Reach Compliance Code :

Unknown

Product Status :

Active

Frequency - Transition :

-

DC Current Gain (hFE) (Min) @ Ic, Vce :

-

Surface Mount :

No

Collector Current-Max (IC) :

3 A

Current - Collector (Ic) (Max) :

3 A

Brand :

Microchip Technology

Vce Saturation (Max) @ Ib, Ic :

2V @ 300μA, 500μA

Terminal Form :

Solder Lug

Configuration :

Single

Pbfree Code :

No

Package / Case :

TO-210AA, TO-59-4, Stud

Collector-Emitter Voltage-Max :

200 V

Power Dissipation-Max (Abs) :

70 W

Product Type :

BJTs - Bipolar Transistors

Current - Collector Cutoff (Max) :

-

Power Dissipation Ambient-Max :

70 W

Transistor Element Material :

SILICON

Operating Temperature :

-65°C ~ 200°C (TJ)

JEDEC-95 Code :

TO-59

Polarity/Channel Type :

NPN

Product Category :

Bipolar Transistors - BJT

Series :

-

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Technology :

Si

Package :

Bulk

Manufacturer :

Microchip

ECCN Code :

EAR99

JESD-30 Code :

O-MUPM-D3