2N5195
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- Mfr.Part #
- 2N5195
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 4A SOT32-3
- Stock
- 127
- In Stock ：
- 127
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 1.5A 2V
- Radiation Hardening :
- No
- Max Power Dissipation :
- 40W
- Terminal Finish :
- Matte Tin (Sn)
- Collector Emitter Saturation Voltage :
- -1.2V
- JESD-609 Code :
- e3
- Transition Frequency :
- 2MHz
- Width :
- 6.35mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- hFE Min :
- 20
- Current - Collector Cutoff (Max) :
- 1mA
- Mount :
- Through Hole
- Operating Temperature :
- 150°C TJ
- Case Connection :
- Isolated
- Emitter Base Voltage (VEBO) :
- 5V
- Pin Count :
- 3
- Package / Case :
- TO-225AA, TO-126-3
- Collector Emitter Breakdown Voltage :
- 80V
- Transistor Type :
- PNP
- Frequency :
- 2MHz
- Collector Base Voltage (VCBO) :
- 80V
- Current Rating :
- -4A
- Voltage - Rated DC :
- -80V
- Pbfree Code :
- yes
- Power Dissipation :
- 40W
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 1A, 4A
- Max Collector Current :
- 4A
- Length :
- 25.4mm
- Height :
- 6.35mm
- REACH SVHC :
- No SVHC
- Collector Emitter Voltage (VCEO) :
- 80V
- Gain Bandwidth Product :
- 2MHz
- Polarity/Channel Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Base Part Number :
- 2N51
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Packaging :
- Tube
- Weight :
- 4.535924g
- Datasheets
- 2N5195
PNP 150°C TJ 1mA 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole
2N5195 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 1.5A 2V.With a collector emitter saturation voltage of -1.2V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.2V @ 1A, 4A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -4A.A transition frequency of 2MHz is present in the part.Collector current can be as low as 4A volts at its maximum.
2N5195 Features
the DC current gain for this device is 20 @ 1.5A 2V
a collector emitter saturation voltage of -1.2V
the vce saturation(Max) is 1.2V @ 1A, 4A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 2MHz
2N5195 Applications
There are a lot of STMicroelectronics
2N5195 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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