2N5550-AP
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- Mfr.Part #
- 2N5550-AP
- Manufacturer
- Micro Commercial Components (MCC)
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 140V 0.6A TO92
- Stock
- 26,929
- In Stock ：
- 26,929
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- Manufacturer :
- Micro Commercial Components (MCC)
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Box (TB)
- Voltage - Collector Emitter Breakdown (Max) :
- 140V
- Mounting Type :
- Through Hole
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 10mA 5V
- RoHS Status :
- RoHS Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 5mA, 50mA
- Reach Compliance Code :
- Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Current - Collector (Ic) (Max) :
- 600mA
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Frequency - Transition :
- 300MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Power - Max :
- 625mW
- Datasheets
- 2N5550-AP
NPN -55°C~150°C TJ 100nA ICBO TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N5550-AP Overview
This device has a DC current gain of 60 @ 10mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 250mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).Collector Emitter Breakdown occurs at 140VV - Maximum voltage.
2N5550-AP Features
the DC current gain for this device is 60 @ 10mA 5V
the vce saturation(Max) is 250mV @ 5mA, 50mA
2N5550-AP Applications
There are a lot of Micro Commercial Co
2N5550-AP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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