2N5550BU
- Mfr.Part #
- 2N5550BU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 140V 0.6A TO92-3
- Stock
- 25,019
- In Stock :
- 25,019
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency - Transition :
- 300MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 10mA 5V
- Number of Terminations :
- 3
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Packaging :
- Bulk
- Power - Max :
- 625mW
- Pbfree Code :
- yes
- JESD-30 Code :
- O-PBCY-T3
- Number of Elements :
- 1
- Transistor Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Polarity/Channel Type :
- NPN
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Configuration :
- Single
- Terminal Finish :
- MATTE TIN
- Current - Collector (Ic) (Max) :
- 600mA
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Terminal Position :
- BOTTOM
- Transition Frequency :
- 100MHz
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 5mA, 50mA
- Qualification Status :
- COMMERCIAL
- Voltage - Collector Emitter Breakdown (Max) :
- 140V
- Mounting Type :
- Through Hole
- Transistor Application :
- AMPLIFIER
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Operating Temperature :
- 150°C TJ
- Surface Mount :
- No
- Datasheets
- 2N5550BU

NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
2N5550BU Overview
This device has a DC current gain of 60 @ 10mA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 100MHz.Detection of Collector Emitter Breakdown at 140V maximal voltage is present.
2N5550BU Features
the DC current gain for this device is 60 @ 10mA 5V
the vce saturation(Max) is 250mV @ 5mA, 50mA
a transition frequency of 100MHz
2N5550BU Applications
There are a lot of Rochester Electronics, LLC
2N5550BU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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