2N5550BU

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Mfr.Part #
2N5550BU
Manufacturer
Fairchild Semiconductor
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
TRANS NPN 140V 0.6A TO92-3
Stock
25,019
In Stock :
25,019

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - Bipolar (BJT) - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Frequency - Transition :
300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce :
60 @ 10mA 5V
Number of Terminations :
3
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Packaging :
Bulk
Power - Max :
625mW
Pbfree Code :
yes
JESD-30 Code :
O-PBCY-T3
Number of Elements :
1
Transistor Type :
NPN
RoHS Status :
ROHS3 Compliant
JESD-609 Code :
e3
Transistor Element Material :
SILICON
Pin Count :
3
Polarity/Channel Type :
NPN
Peak Reflow Temperature (Cel) :
Not Applicable
Configuration :
Single
Terminal Finish :
MATTE TIN
Current - Collector (Ic) (Max) :
600mA
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Terminal Position :
BOTTOM
Transition Frequency :
100MHz
Vce Saturation (Max) @ Ib, Ic :
250mV @ 5mA, 50mA
Qualification Status :
COMMERCIAL
Voltage - Collector Emitter Breakdown (Max) :
140V
Mounting Type :
Through Hole
Transistor Application :
AMPLIFIER
Current - Collector Cutoff (Max) :
100nA ICBO
Operating Temperature :
150°C TJ
Surface Mount :
No
Datasheets
2N5550BU
Introducing Transistors - Bipolar (BJT) - Single Fairchild Semiconductor 2N5550BU from Xinshop,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:TO-226-3, TO-92-3 (TO-226AA), Mounting Type:Through Hole, Operating Temperature:150°C TJ, 2N5550BU pinout, 2N5550BU datasheet PDF, 2N5550BU amp .Beyond Transistors - Bipolar (BJT) - Single Fairchild Semiconductor 2N5550BU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor 2N5550BU


NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole

2N5550BU Overview


This device has a DC current gain of 60 @ 10mA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 100MHz.Detection of Collector Emitter Breakdown at 140V maximal voltage is present.

2N5550BU Features


the DC current gain for this device is 60 @ 10mA 5V
the vce saturation(Max) is 250mV @ 5mA, 50mA
a transition frequency of 100MHz


2N5550BU Applications


There are a lot of Rochester Electronics, LLC
2N5550BU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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