2N5550TA
- Mfr.Part #
- 2N5550TA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 140V 0.6A TO92-3
- Stock
- 1,925
- In Stock :
- 1,925
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 16 hours ago)
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Voltage - Rated DC :
- 140V
- Polarity/Channel Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 140V
- JESD-609 Code :
- e3
- Max Breakdown Voltage :
- 140V
- Current Rating :
- 600mA
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Packaging :
- Tape and Box (TB)
- Transition Frequency :
- 100MHz
- Number of Terminations :
- 3
- Base Part Number :
- 2N5550
- Emitter Base Voltage (VEBO) :
- 6V
- hFE Min :
- 60
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 240mg
- Max Power Dissipation :
- 625mW
- Transistor Type :
- NPN
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Terminal Position :
- BOTTOM
- Max Collector Current :
- 600mA
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 5mA, 50mA
- Power Dissipation :
- 625mW
- Collector Base Voltage (VCBO) :
- 160V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Factory Lead Time :
- 2 Weeks
- Radiation Hardening :
- No
- Mount :
- Through Hole
- Operating Temperature :
- 150°C TJ
- Published :
- 2007
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 10mA 5V
- Transistor Application :
- AMPLIFIER
- Gain Bandwidth Product :
- 300MHz
- Frequency :
- 300MHz
- Contact Plating :
- Tin
- Collector Emitter Breakdown Voltage :
- 140V
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 250mV
- Datasheets
- 2N5550TA

NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N5550TAR Overview
DC current gain in this device equals 60 @ 10mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 250mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 250mV @ 5mA, 50mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 600mA current rating.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 140V volts.In extreme cases, the collector current can be as low as 600mA volts.
2N5550TAR Features
the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 100MHz
2N5550TAR Applications
There are a lot of ON Semiconductor
2N5550TAR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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