2N5550TA

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Mfr.Part #
2N5550TA
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheet
Download
Description
TRANS NPN 140V 0.6A TO92-3
Stock
1,925
In Stock :
1,925

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Lifecycle Status :
ACTIVE (Last Updated: 16 hours ago)
Lead Free :
Lead Free
Number of Elements :
1
Voltage - Rated DC :
140V
Polarity/Channel Type :
NPN
Collector Emitter Voltage (VCEO) :
140V
JESD-609 Code :
e3
Max Breakdown Voltage :
140V
Current Rating :
600mA
RoHS Status :
ROHS3 Compliant
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Transistor Element Material :
SILICON
Pbfree Code :
yes
Packaging :
Tape and Box (TB)
Transition Frequency :
100MHz
Number of Terminations :
3
Base Part Number :
2N5550
Emitter Base Voltage (VEBO) :
6V
hFE Min :
60
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Weight :
240mg
Max Power Dissipation :
625mW
Transistor Type :
NPN
Number of Pins :
3
ECCN Code :
EAR99
Mounting Type :
Through Hole
Terminal Position :
BOTTOM
Max Collector Current :
600mA
Vce Saturation (Max) @ Ib, Ic :
250mV @ 5mA, 50mA
Power Dissipation :
625mW
Collector Base Voltage (VCBO) :
160V
Current - Collector Cutoff (Max) :
100nA ICBO
Factory Lead Time :
2 Weeks
Radiation Hardening :
No
Mount :
Through Hole
Operating Temperature :
150°C TJ
Published :
2007
DC Current Gain (hFE) (Min) @ Ic, Vce :
60 @ 10mA 5V
Transistor Application :
AMPLIFIER
Gain Bandwidth Product :
300MHz
Frequency :
300MHz
Contact Plating :
Tin
Collector Emitter Breakdown Voltage :
140V
Element Configuration :
Single
Collector Emitter Saturation Voltage :
250mV
Datasheets
2N5550TA
Introducing Transistors - Bipolar (BJT) - Single onsemi 2N5550TA from Xinshop,where excellence meets affordability. This product stands out with its Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), Number of Terminations:3, Base Part Number:2N5550, Number of Pins:3, Mounting Type:Through Hole, Operating Temperature:150°C TJ, 2N5550TA pinout, 2N5550TA datasheet PDF, 2N5550TA amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2N5550TA ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2N5550TA


NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole

2N5550TAR Overview


DC current gain in this device equals 60 @ 10mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 250mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 250mV @ 5mA, 50mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 600mA current rating.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 140V volts.In extreme cases, the collector current can be as low as 600mA volts.

2N5550TAR Features


the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 100MHz


2N5550TAR Applications


There are a lot of ON Semiconductor
2N5550TAR applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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