2N5550TAR
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- Mfr.Part #
- 2N5550TAR
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 140V 0.6A TO92-3
- Stock
- 60,252
- In Stock ：
- 60,252
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- BOTTOM
- Max Breakdown Voltage :
- 140V
- Packaging :
- Tape and Box (TB)
- hFE Min :
- 60
- Polarity/Channel Type :
- NPN
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 160V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Voltage (VCEO) :
- 140V
- JESD-609 Code :
- e3
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 300MHz
- Base Part Number :
- 2N5550
- Mount :
- Through Hole
- Radiation Hardening :
- No
- Factory Lead Time :
- 2 Weeks
- Lifecycle Status :
- ACTIVE (Last Updated: 16 hours ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 600mA
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 10mA 5V
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 5mA, 50mA
- Transistor Type :
- NPN
- Frequency :
- 300MHz
- Transistor Application :
- AMPLIFIER
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- 140V
- Collector Emitter Breakdown Voltage :
- 140V
- Published :
- 2007
- Weight :
- 240mg
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- 250mV
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Transition Frequency :
- 100MHz
- Number of Pins :
- 3
- Max Power Dissipation :
- 625mW
- Mounting Type :
- Through Hole
- Contact Plating :
- Tin
- Element Configuration :
- Single
- Max Collector Current :
- 600mA
- Power Dissipation :
- 625mW
- Emitter Base Voltage (VEBO) :
- 6V
- Datasheets
- 2N5550TAR
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N5550TAR Overview
DC current gain in this device equals 60 @ 10mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 250mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 250mV @ 5mA, 50mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 600mA current rating.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 140V volts.In extreme cases, the collector current can be as low as 600mA volts.
2N5550TAR Features
the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 100MHz
2N5550TAR Applications
There are a lot of ON Semiconductor
2N5550TAR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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