2N5550TAR
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- Mfr.Part #
- 2N5550TAR
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 140V 0.6A TO92-3
- Stock
- 60,252
- In Stock ：
- 60,252
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 300MHz
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 5mA, 50mA
- Transition Frequency :
- 100MHz
- Collector Emitter Breakdown Voltage :
- 140V
- Element Configuration :
- Single
- Number of Pins :
- 3
- Frequency :
- 300MHz
- Mounting Type :
- Through Hole
- Packaging :
- Tape and Box (TB)
- Collector Base Voltage (VCBO) :
- 160V
- hFE Min :
- 60
- Max Power Dissipation :
- 625mW
- Emitter Base Voltage (VEBO) :
- 6V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 10mA 5V
- Power Dissipation :
- 625mW
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 140V
- Max Collector Current :
- 600mA
- Contact Plating :
- Tin
- Operating Temperature :
- 150°C TJ
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 250mV
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Transistor Type :
- NPN
- Voltage - Rated DC :
- 140V
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Base Part Number :
- 2N5550
- Terminal Position :
- BOTTOM
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Lifecycle Status :
- ACTIVE (Last Updated: 16 hours ago)
- Published :
- 2007
- Current Rating :
- 600mA
- Factory Lead Time :
- 2 Weeks
- Polarity/Channel Type :
- NPN
- Weight :
- 240mg
- Collector Emitter Voltage (VCEO) :
- 140V
- Transistor Application :
- AMPLIFIER
- Datasheets
- 2N5550TAR
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N5550TAR Overview
DC current gain in this device equals 60 @ 10mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 250mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 250mV @ 5mA, 50mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 600mA current rating.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 140V volts.In extreme cases, the collector current can be as low as 600mA volts.
2N5550TAR Features
the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 100MHz
2N5550TAR Applications
There are a lot of ON Semiconductor
2N5550TAR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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