2N5551
- Mfr.Part #
- 2N5551
- Manufacturer
- onsemi
- Package / Case
- TO-92
- Datasheet
- Download
- Description
- TRANS NPN 160V 0.6A TO92
- Stock
- 30,203
- In Stock :
- 30,203
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- BOTTOM
- Transistor Application :
- AMPLIFIER
- Qualification Status :
- Not Qualified
- Factory Lead Time :
- 8 Weeks
- Frequency - Transition :
- 300MHz
- Collector Emitter Breakdown Voltage :
- 160V
- Published :
- 2012
- Collector Base Voltage (VCBO) :
- 180V
- Transition Frequency :
- 100MHz
- Gain Bandwidth Product :
- 300MHz
- Number of Elements :
- 1
- Polarity :
- NPN
- hFE Min :
- 80
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-609 Code :
- e0
- Pin Count :
- 3
- Power Dissipation-Max :
- 625mW
- Number of Terminations :
- 3
- Packaging :
- Bulk
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 200mV
- Collector Emitter Voltage (VCEO) :
- 200mV
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Continuous Collector Current :
- 600mA
- Max Collector Current :
- 600mA
- HTS Code :
- 8541.21.00.95
- Pbfree Code :
- No
- DC Current Gain-Min (hFE) :
- 80
- Min Operating Temperature :
- -65°C
- RoHS Status :
- RoHS Compliant
- Package / Case :
- TO-92
- Element Configuration :
- Single
- Mount :
- Through Hole
- JESD-30 Code :
- O-PBCY-T3
- Max Operating Temperature :
- 150°C
- Emitter Base Voltage (VEBO) :
- 6V
- Datasheets
- 2N5551

1 Elements 3 Terminations TO-92 Bulk
2N5551 Overview
Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 200mV.Single BJT transistor is recommended to keep the continuous collector voltage at 600mA in order to achieve high efficiency.The emitter base voltage can be kept at 6V for high efficiency.The part has a transition frequency of 100MHz.Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.
2N5551 Features
a collector emitter saturation voltage of 200mV
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
2N5551 Applications
There are a lot of Central Semiconductor
2N5551 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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