2N5961
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- Mfr.Part #
- 2N5961
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.1A TO92-3
- Stock
- 6,668
- In Stock ：
- 6,668
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Bulk
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 500μA, 10mA
- Base Part Number :
- 2N5961
- Published :
- 1997
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Type :
- NPN
- Current - Collector (Ic) (Max) :
- 100mA
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Supplier Device Package :
- TO-92-3
- Power - Max :
- 625mW
- Current - Collector Cutoff (Max) :
- 2nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 10mA 5V
- Datasheets
- 2N5961
NPN -55°C~150°C TJ 2nA ICBO TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
2N5961 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 150 @ 10mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 200mV @ 500μA, 10mA.TO-92-3 is the supplier device package for this product.This device displays a 60V maximum voltage - Collector Emitter Breakdown.
2N5961 Features
the DC current gain for this device is 150 @ 10mA 5V
the vce saturation(Max) is 200mV @ 500μA, 10mA
the supplier device package of TO-92-3
2N5961 Applications
There are a lot of ON Semiconductor
2N5961 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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