2SB1229T
- Mfr.Part #
- 2SB1229T
- Manufacturer
- Sanyo
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 50V 2A 3NP
- Stock
- 32,725
- In Stock :
- 32,725
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- Manufacturer :
- Sanyo
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Supplier Device Package :
- 3-NP
- Voltage - Collector Emitter Breakdown (Max) :
- 50 V
- Package :
- Bulk
- Mounting Type :
- Through Hole
- Product Status :
- Active
- Operating Temperature :
- 150°C (TJ)
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Current - Collector (Ic) (Max) :
- 2 A
- Frequency - Transition :
- 150MHz
- Power - Max :
- 750 mW
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 1A
- Series :
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA, 2V
- Transistor Type :
- PNP
- Datasheets
- 2SB1229T
PNP 150°C (TJ) 100nA (ICBO) TO-226-3, TO-92-3 (TO-226AA) Through Hole
2SB1229T Overview
In this device, the DC current gain is 200 @ 100mA, 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 50mA, 1A.Supplier device package 3-NP comes with the product.The device exhibits a collector-emitter breakdown at 50 V.
2SB1229T Features
the DC current gain for this device is 200 @ 100mA, 2V
the vce saturation(Max) is 700mV @ 50mA, 1A
the supplier device package of 3-NP
2SB1229T Applications
There are a lot of Sanyo
2SB1229T applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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