2SC1008-G-AP

- Mfr.Part #
- 2SC1008-G-AP
- Manufacturer
- Micro Commercial Components (MCC)
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.7A TO92
- Stock
- 7,146





- In Stock :
- 7,146
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- Manufacturer :
- Micro Commercial Components (MCC)
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Box (TB)
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 50mA, 500mA
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- RoHS Status :
- RoHS Compliant
- Transition Frequency :
- 30MHz
- Pin Count :
- 3
- Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- NPN
- Power - Max :
- 800mW
- Frequency - Transition :
- 30MHz
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- ECCN Code :
- EAR99
- Surface Mount :
- No
- Number of Elements :
- 1
- Qualification Status :
- Not Qualified
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 50mA 2V
- Terminal Position :
- BOTTOM
- Transistor Type :
- NPN
- Reach Compliance Code :
- Compliant
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Current - Collector (Ic) (Max) :
- 700mA
- JESD-30 Code :
- O-PBCY-T3
- Datasheets
- 2SC1008-G-AP

NPN 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2SC1008-G-AP Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 50mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 50mA, 500mA.Parts of this part have transition frequencies of 30MHz.This device displays a 60V maximum voltage - Collector Emitter Breakdown.
2SC1008-G-AP Features
the DC current gain for this device is 200 @ 50mA 2V
the vce saturation(Max) is 400mV @ 50mA, 500mA
a transition frequency of 30MHz
2SC1008-G-AP Applications
There are a lot of Micro Commercial Co
2SC1008-G-AP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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