2SC2058STPP
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- Mfr.Part #
- 2SC2058STPP
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-72 Formed Leads
- Datasheet
- Download
- Description
- TRANS NPN 25V 0.05A SPT
- Stock
- 18,125
- In Stock ：
- 18,125
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 50mA
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C TJ
- Transition Frequency :
- 300MHz
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 5V
- Packaging :
- Tape and Reel (TR)
- HTS Code :
- 8541.21.00.75
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 1mA, 10mA
- Polarity/Channel Type :
- NPN
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 25V
- Max Power Dissipation :
- 300mW
- Transistor Type :
- NPN
- Collector Base Voltage (VCBO) :
- 40V
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Number of Pins :
- 3
- Transistor Application :
- AMPLIFIER
- ECCN Code :
- EAR99
- Published :
- 2007
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 82 @ 1mA 6V
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Finish :
- TIN SILVER COPPER
- JESD-609 Code :
- e1
- Package / Case :
- SC-72 Formed Leads
- Qualification Status :
- Not Qualified
- Current - Collector (Ic) (Max) :
- 50mA
- Collector Emitter Voltage (VCEO) :
- 300mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Pin Count :
- 3
- Gain Bandwidth Product :
- 300MHz
- Datasheets
- 2SC2058STPP
NPN 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN SC-72 Formed Leads Tape & Reel (TR) Through Hole
2SC2058STPP Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 82 @ 1mA 6V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 1mA, 10mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 300MHz.During maximum operation, collector current can be as low as 50mA volts.
2SC2058STPP Features
the DC current gain for this device is 82 @ 1mA 6V
the vce saturation(Max) is 300mV @ 1mA, 10mA
the emitter base voltage is kept at 5V
a transition frequency of 300MHz
2SC2058STPP Applications
There are a lot of ROHM Semiconductor
2SC2058STPP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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