2SC3074-Y(Q)
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- Mfr.Part #
- 2SC3074-Y(Q)
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 50V 5A PW-MOLD
- Stock
- 7,852
- In Stock ：
- 7,852
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Frequency - Transition :
- 120MHz
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- RoHS Compliant
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1A 1V
- Published :
- 2010
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Power - Max :
- 1W
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 150mA, 3A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Packaging :
- Tube
- Current - Collector (Ic) (Max) :
- 5A
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Datasheets
- 2SC3074-Y(Q)
NPN 150°C TJ 1μA ICBO TO-252-3, DPak (2 Leads + Tab), SC-63 Tube Surface Mount
2SC3074-Y(Q) Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 1A 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 150mA, 3A.Device displays Collector Emitter Breakdown (50V maximal voltage).
2SC3074-Y(Q) Features
the DC current gain for this device is 120 @ 1A 1V
the vce saturation(Max) is 400mV @ 150mA, 3A
2SC3074-Y(Q) Applications
There are a lot of Toshiba Semiconductor and Storage
2SC3074-Y(Q) applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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