2SC5566-TD-E
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- Mfr.Part #
- 2SC5566-TD-E
- Manufacturer
- onsemi
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 50V 4A PCP
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 50V
- Max Power Dissipation :
- 1.3W
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Length :
- 4.5mm
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 225mV @ 100mA, 2A
- Gain Bandwidth Product :
- 400MHz
- Element Configuration :
- Single
- Height :
- 1.5mm
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-243AA
- JESD-609 Code :
- e6
- Polarity/Channel Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Width :
- 2.5mm
- Terminal Form :
- Flat
- Factory Lead Time :
- 4 Weeks
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Frequency :
- 400MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 3 hours ago)
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 500mA 2V
- Pin Count :
- 3
- Max Collector Current :
- 4A
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Transition Frequency :
- 400MHz
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 6V
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- 85V
- Number of Elements :
- 1
- Surface Mount :
- yes
- Published :
- 2001
- Max Breakdown Voltage :
- 50V
- Collector Base Voltage (VCBO) :
- 100V
- Terminal Position :
- Dual
- Power Dissipation :
- 1.3W
- Collector Emitter Breakdown Voltage :
- 50V
- Operating Temperature :
- 150°C TJ
- hFE Min :
- 200
- Datasheets
- 2SC5566-TD-E
NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
2SC5566-TD-E Overview
This device has a DC current gain of 200 @ 500mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 85V.A VCE saturation (Max) of 225mV @ 100mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.As you can see, the part has a transition frequency of 400MHz.A breakdown input voltage of 50V volts can be used.A maximum collector current of 4A volts is possible.
2SC5566-TD-E Features
the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of 85V
the vce saturation(Max) is 225mV @ 100mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 400MHz
2SC5566-TD-E Applications
There are a lot of ON Semiconductor
2SC5566-TD-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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