2SC5707-E
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- Mfr.Part #
- 2SC5707-E
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS NPN 50V 8A TP
- Stock
- 25,953
- In Stock ：
- 25,953
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 2 Weeks
- Published :
- 2001
- Power Dissipation :
- 1W
- JESD-609 Code :
- e6
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 240mV @ 175mA, 3.5A
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Collector Emitter Saturation Voltage :
- 110mV
- Lifecycle Status :
- ACTIVE (Last Updated: 9 hours ago)
- Collector Base Voltage (VCBO) :
- 100V
- Max Power Dissipation :
- 1W
- Max Breakdown Voltage :
- 50V
- Transistor Element Material :
- SILICON
- Transistor Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 50V
- Pin Count :
- 3
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Frequency :
- 330MHz
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Bulk
- Element Configuration :
- Single
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Max Collector Current :
- 8A
- Gain Bandwidth Product :
- 330MHz
- Emitter Base Voltage (VEBO) :
- 6V
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Mounting Type :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 50V
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 500mA 2V
- Number of Elements :
- 1
- hFE Min :
- 200
- Datasheets
- 2SC5707-E
NPN 150°C TJ 100nA ICBO 1 Elements SILICON TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole
2SC5707-E Overview
This device has a DC current gain of 200 @ 500mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 110mV.A VCE saturation (Max) of 240mV @ 175mA, 3.5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.A breakdown input voltage of 50V volts can be used.A maximum collector current of 8A volts is possible.
2SC5707-E Features
the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of 110mV
the vce saturation(Max) is 240mV @ 175mA, 3.5A
the emitter base voltage is kept at 6V
2SC5707-E Applications
There are a lot of ON Semiconductor
2SC5707-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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