2SC6017-E
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- Mfr.Part #
- 2SC6017-E
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS NPN 50V 10A TP
- Stock
- 21,743
- In Stock ：
- 21,743
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2012
- Transistor Type :
- NPN
- Current - Collector (Ic) (Max) :
- 10A
- Operating Temperature :
- 150°C TJ
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 180mV
- Lifecycle Status :
- ACTIVE, NOT REC (Last Updated: 1 week ago)
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 10A
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 50V
- Number of Pins :
- 3
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 6V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1A 2V
- Packaging :
- Bulk
- Pbfree Code :
- yes
- JESD-609 Code :
- e6
- hFE Min :
- 200
- Collector Base Voltage (VCBO) :
- 100V
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 360mV @ 250mA, 5A
- Collector Emitter Voltage (VCEO) :
- 360mV
- Factory Lead Time :
- 2 Weeks
- Gain Bandwidth Product :
- 200MHz
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Max Power Dissipation :
- 950mW
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Reach Compliance Code :
- not_compliant
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Datasheets
- 2SC6017-E
NPN 150°C TJ 10μA ICBO SILICON TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole
2SC6017-E Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 1A 2V DC current gain.As it features a collector emitter saturation voltage of 180mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.When collector current reaches its maximum, it can reach 10A volts.
2SC6017-E Features
the DC current gain for this device is 200 @ 1A 2V
a collector emitter saturation voltage of 180mV
the vce saturation(Max) is 360mV @ 250mA, 5A
the emitter base voltage is kept at 6V
2SC6017-E Applications
There are a lot of ON Semiconductor
2SC6017-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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