2SC6017-E
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- Mfr.Part #
- 2SC6017-E
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS NPN 50V 10A TP
- Stock
- 21,743
- In Stock ：
- 21,743
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 2 Weeks
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Collector Emitter Voltage (VCEO) :
- 360mV
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Current - Collector (Ic) (Max) :
- 10A
- Max Power Dissipation :
- 950mW
- hFE Min :
- 200
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2012
- Pin Count :
- 3
- Collector Emitter Breakdown Voltage :
- 50V
- Collector Emitter Saturation Voltage :
- 180mV
- Packaging :
- Bulk
- Max Collector Current :
- 10A
- Operating Temperature :
- 150°C TJ
- Lifecycle Status :
- ACTIVE, NOT REC (Last Updated: 1 week ago)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1A 2V
- Vce Saturation (Max) @ Ib, Ic :
- 360mV @ 250mA, 5A
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- JESD-609 Code :
- e6
- Transistor Type :
- NPN
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 100V
- RoHS Status :
- ROHS3 Compliant
- Reach Compliance Code :
- not_compliant
- Gain Bandwidth Product :
- 200MHz
- Datasheets
- 2SC6017-E
NPN 150°C TJ 10μA ICBO SILICON TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole
2SC6017-E Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 1A 2V DC current gain.As it features a collector emitter saturation voltage of 180mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.When collector current reaches its maximum, it can reach 10A volts.
2SC6017-E Features
the DC current gain for this device is 200 @ 1A 2V
a collector emitter saturation voltage of 180mV
the vce saturation(Max) is 360mV @ 250mA, 5A
the emitter base voltage is kept at 6V
2SC6017-E Applications
There are a lot of ON Semiconductor
2SC6017-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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